Related papers: Conductance Plateaus at Quantum Hall Integer Filli…
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$.…
We experimentally study the phase diagram of the integer quantized Hall effect, as a function of density and magnetic field. We used a two dimensional hole system confined in a Ge/SiGe quantum well, where all energy levels are resolved,…
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At…
We have realized an integer quantum Hall system with superconducting contacts by connecting graphene to niobium electrodes. Below their upper critical field of 4 tesla, an integer quantum Hall effect coexists with superconductivity in the…
The observed quantization of the Hall conductivity in graphene at high magnetic fields is explained as being due to the dynamically generated spatial modulation of either the electron spin or the density, as decided by the details of…
We study the transport properties of $HgTe$-based quantum wells containing simultaneously electrons and holes in magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found…
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly,…
Here, we employ a numerical approach to investigate the transport and conductance characteristics of a quantum point contact. A quantum point contact is a narrow constriction of a width comparable to the electron wavelength defined in a…
By taking into account the charge and spin orderings and the exchange interactions between all the Landau levels, we investigate the integer quantum Hall effect of electrons in graphene using the mean-field theory. At the fillings $\nu =…
We study point-contact tunneling in the integer quantum Hall state of bosons. This symmetry-protected topological state has electrical Hall conductivity equal to $2 e^2/h$ and vanishing thermal Hall conductivity. In contrast to the integer…
We have investigated hole transport in one-dimensional quantum wires in strained germanium two-dimensional layers. The ballistic conductance characteristics show the regular quantised plateaux in units of n2e2/h, where n is an integer.…
Quantum point contact devices are indispensable tools for probing the edge structure of the fractional quantum Hall (FQH) states. Recent observations of quantized conductance plateaus accompanied by shot noise in such devices, as well as…
We discuss quantum Hall effect in the presence of arbitrary pair interactions between electrons. It is shown that irrespective of the interaction strength the Hall conductivity is given by the filling fraction of Landau levels averaged over…
We report real-time detection of longitudinal and transverse transport responses across distinct frequency bands in a ferromagnetic filling factor $\nu$ = 1 integer quantum Hall state. By tuning $\nu$, we simultaneously access the evolution…
We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx)…
The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous…
We report a magnetotransport study of the termination of the spin-resolved integer quantum Hall effect by controlled disorder in a gated GaAs/AlGaAs heterostructure. We have found that, for a given N^{th} Landau level, the difference in…
Recent experiments in the integer quantum Hall regime seem to find direct transitions from a quantum Hall state with Hall conductance $\sigma_{xy} = n e^2/h $ with integer $n > 1$, to an insulating state in weak magnetic fields. We study…
When phonons couple to fermions in 2D semimetals, the interaction may turn the system into an insulator. There are several insulating phases in which the time reversal and the sublattice symmetries are spontaneously broken. Examples are…
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a…