Related papers: Ising spin model using Spin-Hall Effect (SHE) indu…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
The polarization of the spin current pumped by a precessing ferromagnet into an adjacent normal metal has a constant component parallel to the precession axis and a rotating one normal to the magnetization. The former component is now…
Error-mitigation methods for Ising machines are reexamined not merely as noise-suppression techniques but as a structural design problem of replica-coupled Ising models. Using simulated annealing as a hardware-noise-free testbed, we…
The article provides a tutorial review on how to treat Ising models within mean-field (MF), effective-field (EF) and exact methods. MF solutions of the spin-1 Blume-Capel (BC) model and the mixed-spin Ising model demonstrate a change of…
The orbital Hall effect (OHE) in light transition metals offers a promising route to generate orbital torques for efficient magnetization control, providing an alternative to conventional spin Hall effect approaches that rely on heavy…
Conversions between spin and charge currents are core technologies in recent spintronics. In this article, we provide methods for estimating inverse spin Hall effects (ISHEs) induced by using microwave-driven spin pumping (SP) as a…
Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers…
We investigate the statistical mechanics of the periodic one-dimensional Ising chain when the number of positive spins is constrained to be either an even or an odd number. We calculate the partition function using a generalization of the…
The Ising model, originally proposed a century ago, has become a cornerstone of combinatorial optimization in recent decades. However, Ising machines remain constrained by a fundamental hardware-speed trade-off. We introduce the Bounce-Bind…
Spin Hall effect (SHE), a mechanism by which materials convert a \textit{charge} current into a \textit{spin} current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However,…
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator…
Various combinatorial optimization NP-hard problems can be reduced to finding the minimizer of an Ising model, which is a discrete mathematical model. It is an intellectual challenge to develop some mathematical tools or algorithms for…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
The perfect quenching of spin tunneling that has previously been discussed in terms of interfering instantons, and has recently been observed in the magnetic molecule \Fe8, is treated using a discrete phase integral (or…
We theoretically investigate an extrinsic spin Hall effect (SHE) in semiconductor heterostructures due to the scattering by an artificial potential created by antidot, STM tip, etc. The potential is electrically tunable. First, we formulate…
Spin-orbit torques (SOTs) generated through the conventional spin Hall effect (SHE) and/or Rashba-Edelstein effect offer potential for magnetization manipulation. However, deterministic switching of perpendicular ferromagnets via SOTs…
The high efficiency of a tunnel magnetic transistor as a source of spin-polarized electrons has been proven recently [X. Jiang {\it et al.}, Phys. Rev. Lett. {\bf 90}, 256603 (2003)]. A concept of this device based on an active group of hot…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
Reformulation of a combinatorial problem into optimization of a statistical-mechanics system, enables finding a better solution using heuristics derived from a physical process, such as by the SA (Simulated Annealing). In this paper, we…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…