Related papers: Ising spin model using Spin-Hall Effect (SHE) indu…

This paper draws attention to a hardware system which can be engineered so that its intrinsic physics is described by the generalized Ising model and can encode the solution to many important NP-hard problems as its ground state. The basic…

The commercial and industrial demand for the solution of hard combinatorial optimization problems push forward the development of efficient solvers. One of them is the Ising machine which can solve combinatorial problems mapped to Ising…

The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…

Here an artificial spin ice (ASI) lattice is introduced that exhibits unique Ising and non-Ising behavior under specific field switching protocols because of the inclusion of coupled nanomagnets into the unit cell. In the Ising regime, a…

Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like…

The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization…

Recently there is considerable interest to realize efficient and low-cost true random number generators (RNGs) for practical applications. One important way is through the use of bistable magnetic tunnel junctions (MTJs). Here we study the…

This paper proposes a spintronic neuron structure composed of a heterostructure of magnets and a piezoelectric with a magnetic tunnel junction (MTJ). The operation of the device is simulated using SPICE models. Simulation results illustrate…

Dynamical Ising machines achieve accelerated solving of complex combinatorial optimization problems by remapping the convergence to the ground state of the classical spin networks to the evolution of specially constructed continuous…

We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit…

In spinelectronics the spin degree of freedom is used to transmit and store information. Ideally this occurs without net charge currents in order to avoid energy dissipation due to Joule heating. To this end the ability to create pure spin…

Superparamagnetic magnetic tunnel junctions (sMTJs) are promising components for true random number generation and probabilistic computing. Achieving high-frequency fluctuation while maintaining reliable control over output level is…

Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…

Electron spin resonance (ESR) spectroscopy in scanning tunneling microscopy (STM) has enabled probing the electronic structure of single magnetic atoms and molecules on surfaces with unprecedented energy resolution, as well as demonstrating…

Exploration of spin-currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates has been of great interest for potential spintronics applications. Due to the inherently weak spin-orbit…

This paper introduces a novel oscillator that combines the tunability of spin Hall-driven nano oscillators with the high quality factor (Q) of high overtone bulk acoustic wave resonators (HBAR), integrating both reference and tunable…

We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…

Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM). For perpendicular MRAM, an extra in-plane field is required…

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

Inverse spin Hall effect (ISHE) in ferromagnetic metals (FM) can also be used to detect the spin current generated by longitudinal spin Seebeck effect in a ferromagnetic insulator YIG. However, anomalous Nernst effect(ANE) in FM itself…