English

Orbital Hall effect assisted field-free perpendicular magnetization switching

Mesoscale and Nanoscale Physics 2025-06-11 v2 Materials Science

Abstract

Spin-orbit torques (SOTs) generated through the conventional spin Hall effect (SHE) and/or Rashba-Edelstein effect offer potential for magnetization manipulation. However, deterministic switching of perpendicular ferromagnets via SOTs requires a strong symmetry-breaking perturbation, typically an external magnetic field. Here, we demonstrate that field-free SOT switching of perpendicular magnetization can be facilitated with the assistance of the orbital Hall effect (OHE). Using a representative Co/PtGd bilayer SOT device, we find that while the planar Hall effect (PHE) generates a finite out-of-plane damping-like torque, representing a lateral symmetry breaking, the SHE-induced torque achievable at practical current density is insufficient to switch the perpendicular magnetization. Incorporating a Mo underlayer and exploiting its strong OHE can amplify the in-plane damping-like torque via orbital-to-spin conversion, enabling efficient field-free deterministic switching without complex device geometries or low symmetric spin sources, providing a straightforward and scalable strategy for achieving high-speed and low-power spintronics.

Keywords

Cite

@article{arxiv.2404.13405,
  title  = {Orbital Hall effect assisted field-free perpendicular magnetization switching},
  author = {Zelalem Abebe Bekele and Yuan-Yuan Jiang and Kun Lei and Xiukai Lan and Xiangyu Liu and Hui Wen and Ding-Fu Shao and Kaiyou Wang},
  journal= {arXiv preprint arXiv:2404.13405},
  year   = {2025}
}

Comments

13 pages, 3 figures, submitted to Applied Physics Reviews

R2 v1 2026-06-28T16:00:46.161Z