Related papers: Voltage Controlled Memristor Threshold Logic Gates
Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the…
We explore the possibilities of designing classical logic gates at nano-scale level using magnetic quantum rings. A single ring is used for designing OR, NOT, XOR, XNOR and NAND gates, while AND and NOR gate responses are achieved using two…
Invertible logic can operate in one of two modes: 1) a forward mode, in which inputs are presented and a single, correct output is produced, and 2) a reverse mode, in which the output is fixed and the inputs take on values consistent with…
Memristor has been identified as the fourth fundamental circuit element by Dr. Leon Chua in 1971 and since then it has gathered a lot of interest because of its non-volatility and are considered as a viable solution to the beyond CMOS era…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for…
Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…
In this paper, a general circuit scheme for noise-tolerant logic design based on Markov Random Field theory and differential Cascade Voltage Switch technique has been proposed, which is an extension of the work in [1-3], [4]. A block with…
This paper presents a design flow for an improved selective multi-threshold(Selective-MT) circuit. The Selective-MT circuit is improved so that plural MT-cells can share one switch transistor. We propose the design methodology from…
In this paper, we propose a novel control architecture, inspired from neuroscience, for adaptive control of continuous-time systems. The proposed architecture, in the setting of standard Neural Network (NN) based adaptive control, augments…
Despite all the progress of semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally…
As conventional memory technologies are challenged by their technological physical limits, emerging technologies driven by novel materials are becoming an attractive option for future memory architectures. Among these technologies,…
In today's world everyday a new technology which is faster, smaller and more complex than its predecessor is being developed. The increased number of transistors packed onto a chip of a conventional system results in increased power…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
We present a novel cryptography architecture based on memristor crossbar array, binary hypervectors, and neural network. Utilizing the stochastic and unclonable nature of memristor crossbar and error tolerance of binary hypervectors and…
Several nanoelectronic devices have been already proved. However, no architecture which makes use of them provides a feasible opportunity to build medium/large systems. Nanoarchitecture proposals only solve a small part of the problems…
The implementation of fault-tolerant quantum gates on encoded logic qubits is considered. It is shown that transversal implementation of logic gates based on simple geometric control ideas is problematic for realistic physical systems…
Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network,…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…
This paper proposes four quadrant analog multiplier using CMOS-memristor circuit. Currently, there are plenty of analog multipliers using resistors and CMOS transistors. They can attain perfect multiplication but have several disadvantages…