Related papers: Voltage Controlled Memristor Threshold Logic Gates
We put forward a new proposal of designing charge-based logic devices considering a cyclic molecule that can be programmed and re-programmed for different functional logical operations and suitably engineered for data storage as well. The…
Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two…
We propose model magneto-logic NOR and NAND gates using a spin valve pillar, wherein the logical operation is induced by spin-polarized currents which also form the logical inputs. The operation is facilitated by the simultaneous presence…
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…
Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce…
The recent progress in quantum computing and space exploration led to a surge in interest in cryogenic electronics. Superconducting devices such as Josephson junction, Josephson field effect transistor, cryotron, and superconducting quantum…
Mapping neuro-inspired algorithms to sensor backplanes of on-chip hardware require shifting the signal processing from digital to the analog domain, demanding memory technologies beyond conventional CMOS binary storage units. Using…
There is need for an energy storage device capable of transferring high power in transient situations aboard naval vessels. Currently, batteries are used to accomplish this task, but previous research has shown that when utilized at high…
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital…
We proposed a scheme to realize a controlled-NOT quantum logic gate in a dimer of exchange coupled single-molecule magnets, $[\textrm{Mn}_4]_2$. We chosen the ground state and the three low-lying excited states of a dimer in a finite…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with…
This paper investigates the potentials of using a hybrid memristor CMOS technology, called MeMOS, for the realisation of ternary adders. Ternary adders exploit the qualitative advantage of multi-value storage capability of memristors…
Irreversible logic circuits dissipate heat for every bit of information that is lost. Information is lost when the input vector cannot be recovered from its corresponding output vector. Reversible logic circuit naturally takes care of…
Recent breakthroughs in associative memories suggest that silicon memories are coming closer to human memories, especially for memristive Content Addressable Memories (CAMs) which are capable to read and write in analog values. However, the…
A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…
Memristor-based crossbar arrays represent a promising emerging memory technology to replace conventional memories by offering a high density and enabling computing-in-memory (CIM) paradigms. While analog computing provides the best…
Memristive crossbar arrays enable in-memory computing by performing parallel analog computations directly within memory, making them well-suited for machine learning, neural networks, and neuromorphic systems. However, despite their…
Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…
Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions.…