Related papers: Voltage Controlled Memristor Threshold Logic Gates

Reversible logic is emerging as an important research area having its application in diverse fields such as low power CMOS design, digital signal processing, cryptography, quantum computing and optical information processing. This paper…

State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…

Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…

The authors show how to implement a 4-state universal logic gate (NOR) using three strain-coupled magnetostrictive-piezoelectric multiferroic nanomagnets (e.g. Ni/PZT) with biaxial magnetocrystalline anisotropy. Two of the nanomagnets…

This thesis proposes novel ternary circuits aiming to reduce energy to preserve battery consumption. The proposed designs include eight ternary logic gates, three ternary combinational circuits, and six Ternary Arithmetic Logic Units. This…

In modern computers, computation is performed by assembling together sets of logic gates. Popular gates like AND, OR, XOR, processing two logic inputs and yielding one logic output, are often addressed as irreversible logic gates where the…

This paper proposes a method to completely hide the functionality of a digital standard cell. This is accomplished by a differential threshold logic gate (TLG). A TLG with $n$ inputs implements a subset of Boolean functions of $n$ variables…

Design paradigms of logic circuits with Quantum-dot Cellular Automata (QCA) have been extensively studied in the recent past. Unfortunately, due to the lack of mature fabrication support, QCA-based circuits often suffer from various types…

Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…

The memristor is promising to be the basic cell of next-generation computation systems. Compared to the traditional MOSFET device, the memristor is efficient over energy and area. But one of the biggest challenges faced with researchers is…

Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used to…

The XOR Boolean logic gate is widely used in many applications such as encryption (XOR ciphers), binary addition (half- and full-adders), error detection (parity bits), etc. but is challenging to construct because of its demanding…

This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of…

Superconducting electronics represents a promising technology, offering not only efficient integration with quantum computing systems, but also the potential for significant power reduction in high-performance computing. Nonetheless, the…

The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…

The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…

In this paper, we present a general reconfigurable multiple-valued logic circuit. The proposed architecture is based on threshold logic gate and is compatible with binary logic, which allows a designer to easily integrate multiple valued…

This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON state…

Memristors have emerged as key candidates for beyond-von-Neumann neuromorphic or in-memory computing owing to the feasibility of their ultrahigh-density three-dimensional integration and their ultralow energy consumption. A memristor is…