English

Non-volatile Complementary Resistive Switch-based Content Addressable Memory

Materials Science 2011-10-18 v2 Emerging Technologies
Authors: Omid Kavehei , Said Al-Sarawi , Sharath Sriram , Madhu Bhaskaran , Kyoung-Rok Cho , Kamran Eshraghian , Derek Abbott
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Abstract

This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic→\rightarrowON state transition that enables this novel CRS application.

Keywords

neuromorphic computing

Cite

@article{arxiv.1108.3716,
  title  = {Non-volatile Complementary Resistive Switch-based Content Addressable Memory},
  author = {Omid Kavehei and Said Al-Sarawi and Sharath Sriram and Madhu Bhaskaran and Kyoung-Rok Cho and Kamran Eshraghian and Derek Abbott},
  journal= {arXiv preprint arXiv:1108.3716},
  year   = {2011}
}

Comments

4 pages, 4 figures

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