Related papers: Semiconductor characterization by scanning ion bea…
The imager IBIS on board INTEGRAL is composed of two detector planes: ISGRI (15 keV - 1 MeV) and PICsIT (170 keV - 10 MeV). Here we describe the data structure of PICsIT and the instrument specific software, including the standard…
In this paper, electron microscopy images of microstructures formed on Ge surfaces by ion beam irradiation were processed to extract topological features as skeleton graphs, which were then embedded using a graph convolutional network. The…
Inverse Compton (IC) emission associated with the non-thermal component of the intracluster medium (ICM) has been a long sought phenomenon in cluster physics. Traditional spectral fitting often suffers from the degeneracy between the…
Ion Mobility Spectrometry (IMS) is a well-known, sensitive and rapid technique to detect dangerous organic compounds. We propose a system in which a crown type discharge generates a ionic flow that is swept towards an array of collectors by…
Ion Beam Analysis (IBA) comprises a set of analytical techniques suited for material analysis, many of which are rather closely related. Self-consistent analysis of several IBA techniques takes advantage of this close relationship to…
IVC characteristics as well as their derivatives were recorded for contacts on the base of CeNiSn, known as Kondo semiconductor, in the metallic and the tunnelling regime at temperatures between 0.1-8 K and in magnetic fields up to 8 T…
This work describes a silicon tracker system developed for experiments with proton-rich radioactive ion beams at the SAMURAI superconducting spectrometer of RIBF at RIKEN. The system is designed for accurate angular reconstruction and…
A challenge preventing successful inverse kinematics measurements with heavy nuclei that are not fully stripped is identifying and tagging the beam particles. For this purpose, the HEavy ISotope Tagger (HEIST) has been developed. HEIST…
Electrochemical Impedance Spectroscopy (EIS) is a crucial technique for assessing corrosion of a metallic materials. The analysis of EIS hinges on the selection of an appropriate equivalent circuit model (ECM) that accurately characterizes…
The Imager on Board Integral Satellite (IBIS) is the imaging instrument of the INTEGRAL satellite, the hard-X/soft-gamma ray ESA mission to be launched in 2001. It provides diagnostic capabilities of fine imaging (12' FWHM), source…
Integrated optics are used to achieve astronomical interferometry inside robust and compact materials, improving the instruments stability and sensitivity. In order to perform differential phase measurements at the H$\alpha$ line (656.3 nm)…
Scanning Microwave Impedance Microscopy (MIM) measurement of photoconductivity with 50 nm resolution is demonstrated using a modulated optical source. The use of a modulated source allows for measurement of photoconductivity in a single…
Bound-states-in-the-continuum (BIC)is a wave-mechanical concept that generates resonances with vanishing spectral linewidths. It has many practical applications in Optics, such as narrow-band filters, mirror-less lasing, and nonlinear…
The Silicon Electron Multiplier (SiEM) is a novel sensor concept for minimum ionizing particle (MIP) detection which uses internal gain and fine pitch to achieve excellent temporal and spatial resolution. In contrast to sensors where the…
The Imaging Computational Microscope (ICM) is a suite of computational tools for automated analysis of functional imaging data that runs under the cross-platform MATLAB environment (The Mathworks, Inc.). ICM uses a semi-supervised…
Independent component analysis (ICA) has become a standard data analysis technique applied to an array of problems in signal processing and machine learning. This tutorial provides an introduction to ICA based on linear algebra formulating…
The ion beam induced charge technique with proton microprobe is used to characterise newly developed p-n junction large area silicon carbide detectors. They were recently produced as part of the ongoing program to develop a new particle…
Particle identification using the energy loss in silicon detectors is a powerful technique for probing the Standard Model (SM) as well as searching for new particles beyond the SM. Traditionally, such techniques use the truncated mean of…
In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the Reactive Ion Etching (RIE) technique in order to increase the charge collection efficiency…
Graphene's linear bandstructure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene-oxide-semiconductor (D2GOS) junction detector…