Related papers: Antiferromagnetic multi-level memory cell
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor…
Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of…
In synthetic antiferromagnets (SAFs) the combination of antiferromagnetic order and synthesis using conventional sputtering techniques is combined to produce systems that are advantageous for spintronics applications. Here we present the…
Although the development of spintronic devices has advanced significantly over the past decade with the use of ferromagnetic materials, the extensive implementation of such devices has been limited by the notable drawbacks of these…
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic…
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with…
Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display…
Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to…
Antiferromagnetic (AF) domain walls have recently attracted revived attention, not only in the emerging field of AF spintronics, but also more specifically for offering fast domain wall velocities and dynamic excitations up to the terahertz…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
Exploiting both spin and charge of the electron in electronic micordevices has lead to a tremendous progress in both basic condensed-matter research and microelectronic applications, resulting in the modern field of spintronics. Current…
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the…
B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the N\'eel order via AF-F phase transition and recent experimental observation of the…
Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their…
Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum…
Control and detection of spin order in ferromagnets is the main principle allowing storing and reading of magnetic information in nowadays technology. The large class of antiferromagnets, on the other hand, is less utilized, despite its…
The research landscape of magnetism has been recently enriched by the discovery of altermagnetism. It is an unconventional phase of matter characterized by a d-wave (or higher even-parity-wave) collinear compensated spin ordering, which…
Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have…