Related papers: Peak separation method for sub-lattice strain anal…
Understanding and control of thermal transport in solids at nanoscale is crucial to engineer and to enhance properties of a new generation of optoelectronic, thermoelectric, and photonic devices. In this regard, semiconductor superlattice…
We study mutual dissociation of heavy nuclei in peripheral collisions at ultrarelativistic energies. Earlier this process was proposed for beam luminosity monitoring via simultaneous registration of forward and backward neutrons in zero…
A new layered iron arsenide oxide (Fe2As2)(Ca4(Mg,Ti)3Oy) was discovered. Its crystal structure is tetragonal with a space group of I4/mmm consisted of the anti-fluorite type FeAs layer and blocking layer of triple perovskite cells and is…
The single crystal of RuAs obtained by Bi-flux method shows obvious successive metal-insulator transitions at T_MI1~255 K and T_MI2~195$ K. The X-ray diffraction measurement reveals a formation of superlattice of 3x3x3 of the original unit…
In this stu dy, two dimensional ( 2D correlation analysis wa s utilized for achieving a significant improvement in the signal to noise (S/N) ratio of laser induced breakdown spectroscopy (LIBS) data . Time resolved LIBS spectra of metallic,…
We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high…
We report X-ray diffraction patterns and calculated electronic band structures of the Dirac line-nodal material CaSb$_2$ under pressure. Its superconducting transition temperature ($T_{\mathrm{c}}=1.7$ K) increases under pressure and…
First-principles full potential linearized augmented plane wave (FLAPW) calculations have been performed for lattice-mismatched common-atom III-V interfaces. In particular, we have examined the effects of epitaxial strain and ordering…
We show that the possibility to address and image single sites of an optical lattice, now an experimental reality, allows to measure the frequency-resolved local particle and hole spectra of a wide variety of one- and two-dimensional…
A measurement technique is described which has the potential to map the atomic site occupancies of ultracold atoms in a short-period three-dimensional optical lattice. The method uses accordion and pinning lattices, together with…
The electronic structure of interfaces between lattice-mismatched semiconductor is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain -- continuum elasticity (CE, treated as a finite difference…
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in…
We propose a method for separating trapped atoms in optical lattices by large distances. The key idea is the cyclic transfer of atoms between two lattices of variable spacing, known as accordion lattices, each covering at least a factor of…
Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and…
We have performed ultrafast pump-probe spectroscopy studies on a series of InAs/GaSb-based short-period superlattice (SL) samples with periods ranging from 46 \AA to 71 \AA. We observe two types of oscillations in the differential…
We present a non-perturbative analysis of a new experimental technique for probing ultracold bosons in an optical lattice by periodic lattice depth modulations. This is done using the time-dependent density-matrix renormalization group…
The measurement of peak laser intensities exceeding $10^{20} \text{W/cm$^2$}$ is in general a very challenging task. We suggest a simple method to accurately measure such high intensities up to about $10^{23} \text{W/cm$^2$}$, by colliding…
A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as…
We have synthesized 10 new iron oxyarsenides, K$Ln_2$Fe$_4$As$_4$O$_2$ ($Ln$ = Gd, Tb, Dy, and Ho) and Cs$Ln_2$Fe$_4$As$_4$O$_2$ ($Ln$ = Nd, Sm, Gd, Tb, Dy, and Ho), with the aid of lattice-match [between $A$Fe$_2$As$_2$ ($A$ = K and Cs)…
Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable…