Related papers: Peak separation method for sub-lattice strain anal…
Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar cells. However, due to strong surface Sb segregation,…
We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified…
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the…
We demonstrate an ab-initio predictive approach to computing the thermal conductivity ($\kappa$) of InAs/GaAs superlattices (SLs) of varying period, thickness, and composition. Our new experimental results illustrate how this method can…
Recent advances in scanning transmission electron and scanning tunneling microscopies allow researchers to measure materials structural and electronic properties, such as atomic displacements and charge density modulations, at an Angstrom…
We calculate the band structure of a two-dimensional GaAs/AlGaAs superlattice and estimate the ultimate efficiency of solar cells using this type of structure for solar energy conversion. The superlattice under consideration consists of…
This study systematically investigates the photoconductive properties of low-temperature-grown Beryllium (Be)-doped InGaAs/InAlAs strain-balanced superlattices (SLs) grown by molecular beam epitaxy under stationary growth conditions on…
A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the…
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge.
We report the epitaxial stabilization of GdAuSb films and GdAuSb/LaAuSb superlattices via molecular beam epitaxy on (0001)-oriented Al$_{2}$O$_{3}$ substrates. GdAuSb crystallize in the Au-Au dimerized YPtAs structure type (space group…
The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We…
A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer…
We report the first fully self-consistent calculations of the nonlinear optical properties of superlattices. The materials investigated are mono-layer superlattices with GaP grown on the the top of InP, AlP and GaAs (110) substrates. We use…
Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material's properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution…
We measure the superradiant emission in a one-dimensional (1D) superradiance lattice (SL) in ultracold atoms. Resonantly excited to a superradiant state, the atoms are further coupled to other collectively excited states, which form a 1D…
We demonstrate precision laser spectroscopy of a trapped $^{173}$Yb$^+$ ion that is not directly laser cooled by coupling it to ultracold atoms. The atomic bath continuously cools the internal degrees of freedom of the ion to its hyperfine…
[111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW)…
We directly measure the nonlinear optical response in argon and nitrogen in a thin gas target to laser intensities near the ionization threshold. No instantaneous negative nonlinear refractive index is observed, nor is saturation, in…
We present a comparison between interband cascade lasers (ICLs) with a 6-stage active region emitting at 5 $\mu$m with AlSb/InAs superlattice claddings and with bulk Al_0.85 Ga_0.15 As_0.07 Sb_0.93 claddings. Utilizing bulk AlGaAsSb…
We demonstrate a low noise short wavelength infrared (SWIR) Sb based type II superlattice (T2SL) avalanche photodiodes (APD). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by…