Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires

Atanu Patra; Jaya Kumar Panda; Anushree Roy; Mauro Gemmi; Jérémy David; Daniele Ercolani; Lucia Sorba

doi:10.1063/1.4929979

Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires

Materials Science 2015-09-30 v1

Authors: Atanu Patra , Jaya Kumar Panda , Anushree Roy , Mauro Gemmi , Jérémy David , Daniele Ercolani , Lucia Sorba

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Abstract

The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.

Keywords

heterostructured nanowires axial strain raman measurements to phonon lattice mismatch electron diffraction

Cite

@article{arxiv.1506.00401,
  title  = {Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires},
  author = {Atanu Patra and Jaya Kumar Panda and Anushree Roy and Mauro Gemmi and Jérémy David and Daniele Ercolani and Lucia Sorba},
  journal= {arXiv preprint arXiv:1506.00401},
  year   = {2015}
}

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14 pages, 5 figures

Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires

Abstract

Keywords

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