Related papers: Compensated ferrimagnetic tetragonal Heusler thin …
Noncollinear magnets provide essential ingredients for the next generation memory technology. It is a new prospect for the Heusler materials, already well known due to the diverse range of other fundamental characteristics. Here, we present…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
Future spintronics requires the realization of thin film of half-metallic ferromagnets having high Curie temperature and 100\% spin polarization at the Fermi level for potential spintronics applications. In this paper, we report the…
Incorporating zero-net-magnetization magnets that exhibit spin-splitting into spintronics delivers key advantages: faster switching dynamics, greater immunity to destabilizing fields, lower power consumption, and markedly improved overall…
Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a…
Half-metallic Heusler alloys are among the most promising materials for future applications in spintronic devices. Although most Heusler alloys are ferromagnets, ferrimagnetic or antiferromagnetic (also called fully-compensated…
Magnetic compensated state attracted much interests due to the observed large exchange bias and large coercivity, and its potential applications in the antiferromagnetic spintronics with merit of no stray field. In this work, by ab initio…
Here we study both static and time-resolved dynamic magnetic properties of the compensated ferrimagnet from room temperature down to 10K, thus crossing the magnetic compensation temperature $T_{M}$. The behaviour is analysed with a model of…
The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial…
Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport…
The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements…
Ferrimagnetic alloy thin films that exhibit perpendicular (out-of-plane) magnetic anisotropy (PMA) with low saturation magnetization, such as GdCo and Mn4N, were predicted to be favorable for hosting small Neel skyrmions for room…
Certain rare-earth iron garnet (RIG) thin films combine desirable properties such as low magnetic damping, high magnetostriction, and, in some cases, perpendicular magnetic anisotropy (PMA), making them attractive for spintronics…
Although the development of spintronic devices has advanced significantly over the past decade with the use of ferromagnetic materials, the extensive implementation of such devices has been limited by the notable drawbacks of these…
Altermagnetic materials, with real-space antiferromagnetic arrangement and reciprocal-space anisotropic spin splitting, have attracted much attention. However, the spin splitting is small in most altermagnetic materials, which is a…
The properties of antiferromagnetic ferromagnetic bilayer have been studied using self-consistent mean-field approximation for Heisenberg Hamiltonian. The perpendicular exchange coupling has been revealed in a bilayer with a compensated…
A magnetic material combining low losses and large Perpendicular Magnetic Anisotropy (PMA) is still a missing brick in the magnonic and spintronic fields. We report here on the growth of ultrathin Bismuth doped Y$_{3}$Fe$_{5}$O$_{12}$…
Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades,…
Development of modern spintronic devices requires materials exhibiting specific magnetic effects. In this paper, we investigate a magnetization reversal mechanism in a [Co/Pdx]7/CoO/[Co/Pdy]7 thin-film composite where an antiferromagnet is…
We propose a concept of half-semiconductor antiferromagnets in which both spin-polarized valence and conduction bands belong to the same spin channel with completely compensated spontaneous magnetization. Using density functional theory…