Numerical simulation of magnetization process in antiferromagnetic ferromagnetic bilayer with compensated interface
Materials Science
2009-11-11 v1
Abstract
The properties of antiferromagnetic ferromagnetic bilayer have been studied using self-consistent mean-field approximation for Heisenberg Hamiltonian. The perpendicular exchange coupling has been revealed in a bilayer with a compensated interface. For a uniform antiferromagnetic film a symmetrical hysteresis loop has been calculated, because the transverse instability develops within the antiferromagnetic film at certain critical value of external magnetic field. On the other hand, shifted hysteresis loop with a finite exchange bias field has been obtained for a non-uniform antiferromagnetic film consisting of various domains with perpendicular directions of the easy anisotropy axes.
Cite
@article{arxiv.cond-mat/0508069,
title = {Numerical simulation of magnetization process in antiferromagnetic ferromagnetic bilayer with compensated interface},
author = {N. A. Usov and S. A. Gudoshnikov},
journal= {arXiv preprint arXiv:cond-mat/0508069},
year = {2009}
}
Comments
6 pages, 4 figures