English

Luttinger compensated bipolarized magnetic semiconductor

Materials Science 2025-02-26 v1

Abstract

Altermagnetic materials, with real-space antiferromagnetic arrangement and reciprocal-space anisotropic spin splitting, have attracted much attention. However, the spin splitting is small in most altermagnetic materials, which is a disadvantage to their application in electronic devices. In this study, based on symmetry analysis and the first-principles electronic structure calculations, we predict for the first time two Luttinger compensated bipolarized magnetic semiconductors Mn(CN)2 and Co(CN)2 with isotropic spin splitting as in the ferromagnetic materials. Our further analysis shows that the Luttinger compensated magnetism here depends not only on spin group symmetry, but also on the crystal field splitting and the number of d-orbital electrons. In addition, the polarized charge density indicates that both Mn(CN)2 and Co(CN)2 have the quasi-symmetry T{\tau} , resulting from the crystal field splitting and the number of d-orbital electrons. The Luttinger compensated magnetism not only has the zero total magnetic moment as the antiferromagnetism, but also has the isotropic spin splitting as the ferromagnetism, thus our work not only provides theoretical guidance for searching Luttinger compensated magnetic materials with distinctive properties, but also provides a material basis for the application in spintronic devices.

Keywords

Cite

@article{arxiv.2502.18136,
  title  = {Luttinger compensated bipolarized magnetic semiconductor},
  author = {Peng-Jie Guo and Xiao-Yao Hou and Ze-Feng Gao and Huan-Cheng Yang and Wei Ji and Zhong-Yi Lu},
  journal= {arXiv preprint arXiv:2502.18136},
  year   = {2025}
}
R2 v1 2026-06-28T21:57:13.683Z