Related papers: On drift fields in CMOS Monolithic Active Pixel Se…
DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage with a fully depleted sensor in one single device, resulting in a very good signal-to-noise ratio even for thin sensors. DEPFET pixels are…
Monolithic active pixel sensors (MAPS) are now well established as a technology for tracking charged particles, especially when low material budget is desirable. For such applications, sensors focus on spatial resolution and pixels with…
This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they…
Dense tracking environments in experiments at CERN's High-Luminosity LHC and future FCC experiments call for an increased use of timing information in addition to the position measurement of pixel detectors. This adds one dimension to the…
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…
This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin…
Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…
In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…
Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the…
Purpose: Current photon-counting computed tomography detectors are limited to a pixel size of around 0.3 mm-0.5 mm due to excessive charge sharing degrading the dose efficiency and energy resolution as the pixels become smaller. In this…
The demands on detectors for particle detection as well as for medical and astronomical X-ray imaging are continuously pushing the development of novel pixel detectors. The state of the art in pixel detector technology to date are hybrid…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…
The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addresses the challenges of porting an existing hybrid pixel…
The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at 0.07% X/X$_{0}$ per layer and have a low power consumption…
Inspired by recent experimental observations of anomalously large decay lengths in concentrated electrolytes, we revisit the Restricted Primitive Model (RPM) for an aqueous electrolyte. We investigate the asymptotic decay lengths of the…
Pixel Detectors, as the current technology of choice for the innermost vertex detection, have reached a stage at which large detectors have been built for the LHC experiments and a new era of developments, both for hybrid and for monolithic…
CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is…
This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in…
Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen…