Related papers: On drift fields in CMOS Monolithic Active Pixel Se…

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…

CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low…

A pixel detector with a CVD diamond sensor has been studied in a 180 GeV/c pion beam. The charge collection properties of the diamond sensor were studied as a function of the track position, which was measured with a silicon microstrip…

Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…

This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…

Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is…

Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting…

Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when…

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies…

An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active…

An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…

Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiments and other fields of research like medical imaging and…

This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable…

Purpose: CMOS pixel sensors have become extremely attractive for future high performance tracking devices. Initial R\&D work has been conducted for the vertex detector for the proposed Circular Electron Positron Collider that will allow…

Monolithic Active Pixel Sensors (MAPS) achieved widespread use in several scientific applications, thanks to their properties, such as low material budget and high granularity. The ARCADIA INFN project developed a Fully-Depleted MAPS…

CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called…

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF,…