Related papers: On drift fields in CMOS Monolithic Active Pixel Se…

MiniCACTUS is a monolithic sensor prototype optimised for timing measurement of charged particles. It has been designed in a standard 150 nm CMOS process without dedicated amplification layer. It is intended as a demonstrator chip for…

LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the…

We present a concept to improve the spatial resolution of silicon pixel-detectors via the implementation of a sub-pixel cross-coupling, which introduces directional charge sharing between pixels. The charge-collection electrode is segmented…

We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry…

We introduce the fully-depleted charge-coupled device (CCD) as a particle detector. We demonstrate its low energy threshold operation, capable of detecting ionizing energy depositions in a single pixel down to 50 eVee. We present results of…

In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron…

Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider…

We propose depth from coupled optical differentiation, a low-computation passive-lighting 3D sensing mechanism. It is based on our discovery that per-pixel object distance can be rigorously determined by a coupled pair of optical…

Camera image sensors can be used to detect ionizing radiation in addition to optical photons. In particular, cosmic-ray muons are detected as long, straight tracks passing through multiple pixels. The distribution of track lengths can be…

Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the…

Bent monolithic active pixel sensors are the basis for the planned fully cylindrical ultra low material budget tracking detector ITS3 of the ALICE experiment. This paper presents results from testbeam campaigns using high-energy particles…

Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…

Multi-modal depth estimation is one of the key challenges for endowing autonomous machines with robust robotic perception capabilities. There have been outstanding advances in the development of uni-modal depth estimation techniques based…

Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…

An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach…

In MicroPattern Gas Detectors (MPGD) when the pixel size is below 100 micron and the number of pixels is large (above 1000) it is virtually impossible to use the conventional PCB read-out approach to bring the signal charge from the…

For the Inner Tracking System 3 (ITS3) upgrade, the ALICE experiment at CERN requires monolithic active pixel sensors of dimensions up to 97~mm$\,\times\,$266~mm, occupying a large fraction of a 300 mm wafer. To manufacture such a…

Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE…

We are investigating the use of low temperature wafer-wafer bonding in the fabrication of next-generation particle pixel detectors. This bonding technique could enable the integration of fully processed CMOS readout wafers with high-Z…

In recent years, there has been a gradual increase in the performance of Complementary Metal Oxide Semiconductor (CMOS) cameras. These cameras have gained popularity as a viable alternative to charge-coupled device (CCD) cameras in a wide…