Related papers: A model based DC analysis of SiPM breakdown voltag…
The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (Si PM). The method is based on…
The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15$\times $15, 25$\times $25, 50$\times $50, and 100$\times $100 $\mu $m$^2$, manufactured by KETEK, has been investigated. From the current-voltage…
The results of a 1-D Monte-Carlo program, which simulates the avalanche multiplication in diodes with depths of the order of 1 $\mu$m based on the method proposed in Ref.1, are presented. The aim of the study is to achieve a deeper…
The gain-voltage dependence for SiPMs from V. Chmill et al., Study of the breakdown voltage of SiPMs, is reanalyzed and a non-linearity at the sub-percent level is observed. Simulations show that he non-linearity can be explained by the…
In this Letter, through the comparison between experiment and numerical simulation, we reveal the dynamic mechanism underlying the abnormal polarity effect in SF6 short-gap DC breakdown, as well as a novel criterion for predicting negative…
Understanding the microscopic phenomena behind vacuum arc ignition and generation is crucial for being able to control the breakdown rate, thus improving the effectiveness of many high-voltage applications where frequent breakdowns limit…
Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers, for instance, for the detection of photons in high energy physics and medical physics. In the present work, electrical characterizations of…
This work illustrates and compares some methods to measure the most relevant parameters of silicon photo-multipliers (\sipm{}s), such as photon detection efficiency as a function of over-voltage and wavelength, dark count rate, optical…
A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm$^{-2}$. The cell has a pitch…
A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm$^{-2}$. The cell has a pitch…
PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic…
An approximate iterative model of avalanche process in a pixel of micropixel avalanche photodiode initiated by a single photoelectron is presented. The model describes development of the avalanche process in time, taking into account change…
To ensure reliability, power transformers are monitored for partial discharge (PD) events, which are symptoms of transformer failure. Since failures can have catastrophic cascading consequences, it is critical to preempt them as early as…
This thesis investigates the mechanically controlled break junctions, with a particular emphasis on elucidating the behaviour of molecular currents at room temperature. The core of this experimental investigation involves a detailed…
Miller formula modified to take into account voltage drop on serial resistor of an avalanche photodiode is considered. It is proven by experimental data that modified Miller formula can describe operation of both regular and micropixel…
During the dielectric breakdown process of thin solid-state nanopores, the application of high voltages may cause the formation of multi-nanopores on one chip, which number and sizes are important for their applications. Here, simulations…
Motivated by recent experiments on the finite temperature Mott transition in VO2 films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to…
A recent report on the over saturation in SiPMs is puzzling. The measurements, using a variety of SiPMs, show an excess in signal far beyond the physical limit of the number of SiPM microcells without indication of an ultimate saturation.…
Silicon Photo-Multipliers (SiPM) are regarded as novel photo-detectors to replace conventional Photo-Multiplier Tubes (PMTs). However, the breakdown voltage dependence on the ambient temperature results in a gain variation of $\sim$3$\%…
We present characterization results of two silicon photomultipliers; the Hamamatsu LVR-6050-CN and the Ketek PM3325 WB. With our measurements of the bias dependence of the breakdown probability we are able to draw conclusions about the…