Radiation hardness study using SiPMs with single-cell readout

E. Garutti; E. Popova; P. Parygin; O. Bychkova; A. Kaminsky; S. Martens; J. Schwandt; A. Stifutkin

Radiation hardness study using SiPMs with single-cell readout

Instrumentation and Detectors 2021-11-02 v1 High Energy Physics - Experiment

Authors: E. Garutti , E. Popova , P. Parygin , O. Bychkova , A. Kaminsky , S. Martens , J. Schwandt , A. Stifutkin

Abstract

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm $^{-2}$ . The cell has a pitch of 15 $\mu$ m. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of $V_{off}$ by $\approx$ 0.5 V is observed after $\Phi$ = 5e13 cm $^{-2}$ .

Keywords

silicon photomultipliers radiation damage in silicon precision measurements in physics

Cite

@article{arxiv.2111.00483,
  title  = {Radiation hardness study using SiPMs with single-cell readout},
  author = {E. Garutti and E. Popova and P. Parygin and O. Bychkova and A. Kaminsky and S. Martens and J. Schwandt and A. Stifutkin},
  journal= {arXiv preprint arXiv:2111.00483},
  year   = {2021}
}

Comments

6 pages, 11 figures

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