Radiation damage uniformity in a SiPM

O. Bychkova; E. Garutti; E. Popova; A. Stifutkin; S. Martens; P. Parygin; A. Kaminsky; J. Schwandt

doi:10.1016/j.nima.2022.167042

Radiation damage uniformity in a SiPM

Instrumentation and Detectors 2022-08-31 v1

Authors: O. Bychkova , E. Garutti , E. Popova , A. Stifutkin , S. Martens , P. Parygin , A. Kaminsky , J. Schwandt

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Abstract

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm $^{-2}$ . The cell has a pitch of 15 $\mu$ m. Results of the measurements and analysis of the IV-curves are presented. Impact of the self-heating effect was investigated. The radiation damage uniformity of 1 cell and 120 cells was checked up to $U_\mathit{ov}$ = 1.7 V. Fluence dependence of the breakdown voltage from the current measurements $U^{IV}_\mathit{bd}$ was extracted and compared to that of the breakdown voltage from the gain measurements $U^{G}_\mathit{bd}$ .

Keywords

radiation damage in silicon

Cite

@article{arxiv.2205.00725,
  title  = {Radiation damage uniformity in a SiPM},
  author = {O. Bychkova and E. Garutti and E. Popova and A. Stifutkin and S. Martens and P. Parygin and A. Kaminsky and J. Schwandt},
  journal= {arXiv preprint arXiv:2205.00725},
  year   = {2022}
}

Comments

arXiv admin note: text overlap with arXiv:2111.00483

Radiation damage uniformity in a SiPM

Abstract

Keywords

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