Related papers: A model based DC analysis of SiPM breakdown voltag…
A unified model of voltage mode control (VMC) and current mode control (CMC) is proposed to predict the saddle-node bifurcation (SNB). Exact SNB boundary conditions are derived, and can be further simplified in various forms for design…
Silicon Photomultipliers (SiPMs) have been widely adopted for photon detection in next-generation dark matter and neutrino detection experiments. Internal crosstalk, resulting from secondary photons produced during charge avalanches, is a…
Large-area next-generation physics experiments rely on using Silicon Photo-Multiplier (SiPM) devices to detect single photons, which trigger charge avalanches. The noise mechanism of external cross-talk occurs when secondary photons…
We investigate the breakdown of disordered networks under the action of an increasing external---mechanical or electrical---force. We perform a mean-field analysis and estimate scaling exponents for the approach to the instability. By…
The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements…
The way in which electric power depends on the topology of circuits with mixed voltage and current sources is examined. The power flowing in any steady-state DC circuit is shown to depend on a minimal set of key variables called fundamental…
Breakdowns may occur in high-voltage applications even in ultrahigh vacuum conditions. Previously, we showed that it is important to pay attention to the post-breakdown voltage recovery in order to limit the appearance of secondary…
A multi-physics and multi-scale computational approach is proposed in the present work to study the evolution of microcracking in polycrystalline Silicon (Si) solar cells composing photovoltaic (PV) modules. Coupling between the elastic and…
With increasing penetration of renewable energy and active consumers, control and management of power distribution networks has become challenging. Renewable energy sources can cause random voltage fluctuations as their output power depends…
Breakdown voltages of a capacitively coupled radio frequency argon discharge at 27 MHz are studied. We use a one-dimensional electrostatic PIC code to investigate the effect of changing the secondary emission properties of the electrodes on…
Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the…
We study switching current distributions in superconducting nanostrips using theoretical models and numerical simulations. Switching current distributions are commonly measured in experiments and may provide a window into the microscopic…
This paper presents a regression-based method for estimating voltages and voltage sensitivities for volt-var control on distribution circuits with limited data. The estimator uses power flow results for representative load and PV output…
This work develops an analytical model to consistently interpret the steady-state and small-perturbation response (both in the time and frequency domain) of photoanodes for solar water-splitting. In addition to accounting for the…
This letter proposes a lightweight, model-free online diagnostic framework for detecting internal short circuits (ISC) in single lithium-ion cells under dynamic operating conditions. The core of the method lies in computing the first-order…
Accurate characterization of quantum yield is crucial to the reconstruction of energy depositions in silicon at the eV scale. This work presents a new method for experimentally calculating quantum yield using vacuum UV-sensitive silicon…
A non-destructive technique for obtaining voltage contrast information with photoelectron emission microscopy (PEEM) is described. Samples consisting of electrically isolated metal lines were used to quantify voltage contrast in PEEM. The…
A model is described, in which electrical breakdown in high-voltage systems is caused by stochastic fluctuations of the mobile dislocation population in the cathode. In this model, the mobile dislocation density normally fluctuates, with a…
A MOSFET threshold voltage extraction method covering the entire range of drain-to-source voltage, from linear to saturation modes, is presented. Transconductance-to-current ratio is obtained from MOSFET transfer characteristics measured at…
Interest in air breakdown phenomena has recently been re-kindled with the advent of advanced virtual prototyping of radio frequency (RF) sources for use in high power microwave (HPM) weapons technology. Air breakdown phenomena are of…