Related papers: Manganite-based three level memristive devices wit…
Colossal enhancement of magnetoresistance has been achieved over a broad temperature range which extends upto the room temperature, in ferromagnetic metal-charge ordered insulator manganite multi-layers. The artificially created phase…
The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of…
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…
We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual…
The rare-earth ions (RE = Eu, Dy Ho, Tm, Y) substituted charge-ordered antiferromagnetic manganites, Pr0.45RE0.05Ca0.5MnO3, were studied for the magnetic and the transport properties in the presence of external magnetic-fields of up to 14…
The origin of the resistivity minimum observed in strongly phase separated manganites has been investigated in single crystalline thin films of LPCMO (x~0.42, y~0.40). The antiferromagnetic/charge ordered insulator (AFM/COI)-ferromagnetic…
Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…
Conductivity noise in dc current biased La_{0.82}Ca_{0.18}MnO_{3} single crystals has been investigated in different metastable resistivity states enforced by applying voltage pulses to the sample at low temperatures. Noise measured in all…
We have studied a non volatile memory effect in the mixed valent compound La$_{0.5}$Ca$_{0.5}$MnO$_{3}$ induced by magnetic field (H). In a previous work [R.S. Freitas et al., Phys. Rev. B 65 (2002) 104403], it has been shown that the…
We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…
Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…
We have investigated the dc and pulsed current-induced electroresistance in phase separated manganite Nd0.5Ca0.5Mn0.95Ni0.05O3 (NCMONi05) as a function of temperature and magnetic field. It is shown that the negative differential resistance…
Dual-layer resistive switching devices with horizontal W electrodes, vertical Pd electrodes and WOx switching layer formed at the sidewall of the horizontal electrodes have been fabricated and characterized. The devices exhibit…
Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an…
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
We have studied magnetic and transport properties on different manganese oxide based compounds exhibiting phase separation: polycrystalline La5/8-yPryCa3/8MnO3 (y=0.3) and La1/2Ca1/2Mn1-zFezO3 (z = 0.05), and single crystals of…
Usually, resistive switching (RS) devices show digital RS memory (sharp SET and RESET process), which is most suitable for digital data storage applications. Some RS devices also manifest ideal memristive behavior or analog memory…
Itinerant metamagnetism transition is observed and studied in perovskite La1-xCaxMn0.90Cu0.10O3 system for x = 0.30. At a constant low temperature, 10 K < T < 150 K, there is a continuous second-order metamagnetism jump from a low magnetic…