Non-filamentary memristive switching in Pt/CuOx/Si/Pt systems

L. L. Wei; D. S. Shang; J. R. Sun; S. B. Lee; Z. G. Sun; B. G. Shen

doi:10.1088/0957-4484/24/32/325202

Non-filamentary memristive switching in Pt/CuOx/Si/Pt systems

Materials Science 2013-07-23 v1

Authors: L. L. Wei , D. S. Shang , J. R. Sun , S. B. Lee , Z. G. Sun , B. G. Shen

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Abstract

We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual electroforming marked by resistance increasing and capacitance decreasing is observed in current-voltage and capacitance characteristics. By the Auger electron spectroscopy analysis, a model based on Cu ion and oxygen vacancy drift, and thickness change of the SiOx layer at the CuOx/Si interface was proposed for the memristive switching and gradual electroforming, respectively. The present work would be meaningful for the preparation of forming-free and homogeneous memristive devices.

Keywords

memristive switching non-filamentary switching Pt/CuOx/Si/Pt devices electroforming Auger electron spectroscopy oxygen vacancy drift Cu ion drift

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@article{arxiv.1304.4078,
  title  = {Non-filamentary memristive switching in Pt/CuOx/Si/Pt systems},
  author = {L. L. Wei and D. S. Shang and J. R. Sun and S. B. Lee and Z. G. Sun and B. G. Shen},
  journal= {arXiv preprint arXiv:1304.4078},
  year   = {2013}
}

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17 pages, 8 figures

Non-filamentary memristive switching in Pt/CuOx/Si/Pt systems

Abstract

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