Related papers: Manganite-based three level memristive devices wit…
We report the frequency-dependent conductivity of the manganite system La1-xSrxMnO3 (x <= 0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with…
We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K.…
Magnetization, magnetoresistance, and magnetodielectric measurements have been carried out on the half doped charge ordered manganite, Pr_0.5Ca_0.5MnO_3. The low temperature state is found to be strongly dependent on the oxygen…
Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision)…
We investigated electrical and magnetic properties of the electron-doped manganites Ca1-xSmxMnO3 (0<x<0.2). Our results indicate the possibility of phase separation in electron doped manganites. The compounds with x = 0.13-0.15 show unusual…
Nonvolatile photonic integrated circuits employing phase change materials have relied either on optical switching mechanisms with precise multi-level control but poor scalability or electrical switching with seamless integration and…
A tight binding parametrization of local spin density functional band theory is combined with a dynamical mean field treatment of correlations to obtain a theory of the magnetic transition temperature, optical conductivity and T=0 spinwave…
The layered compound BaCo1-xNixS2-y (0.05<x<0.2 and 0.05<y<0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
Ultrafast optical excitations allow creating new metastable and hidden states in quantum materials. However, the fundamental material properties required to support new emergent order are largely unknown. Here we show for two colossal…
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…
The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic…
Control over the novel quantum states that emerge from non-equilibrium conditions is of both fundamental and technological importance. Metastable charge density wave (CDW) states are particularly interesting as their electrical manipulation…
By reducing an electronically phase separated manganite (La[1-y]Pr[y])[x]Ca[1-x]MnO3 single crystal thin film to dimensions on the order of the inherent phase domains, it is possible to isolate and monitor the behavior of single domains at…
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…
In this work, the structural and transport properties of (Nd0.7-xLax)Sr0.3MnO3 manganites with x = 0, 0.1 and 0.2 prepared by solid state reaction route are studied. These compounds are found to be crystallized in orthorhombic structural…
Synchrotron infrared measurements were conducted over the range 100 to 8000 cm-1 on a self-doped LaxMnO3-d (x~~0.8) film. From these measurements we determined the conductivity, the effective number of free carriers, and the specific phonon…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their…