Related papers: Manganite-based three level memristive devices wit…
We have studied the effect of electric field on transport properties of the prototypical phase separated manganite La5/8-yPryCa3/8MnO3 with y=0.34. Our results show that the suggested image in which the charge ordered state is melted by the…
The electrical properties and performance characteristics of niobium dioxide (NbO$_\mathrm{2}$)-based memristive devices are examined at cryogenic temperatures. Sub-stoichiometric Nb$_\mathrm{2}$O$_\mathrm{5}$ was deposited via magnetron…
Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
The Monte Carlo Ferromagnetic Ising model was used to study the electrical properties of manganese oxides due to the charge ordering phase occurring at doping, x = 0.5. The half-doped manganites have an insulator antiferromagnetic ground…
In metal-insulator transition materials, a small perturbation can shift the delicate balance between competing or coexisting electronic phases, leading to dramatic changes of the material's properties. Using La0.7Sr0.3MnO3, a prototypical…
We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
Phase-separated manganites provide a unique platform to study the dynamics of competing electronic and structural orders in correlated systems. In La0.275Pr0.35Ca0.375MnO3 (LPCMO), we use temperature-cycling Raman spectroscopy to uncover a…
We have studied the effect of metastable, irreversibility induced by repeated thermal cycles on the electric transport and magnetization of polycrystalline samples of La1-xCaxMnO3 (0.48\leq x \leq 0.55) close to charge ordering. With time…
The ground state properties of correlated electron systems can be extraordinarily sensitive to external stimuli, such as temperature, strain, and electromagnetic fields, offering abundant platforms for functional materials. We present a…
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…
In this theoretical study, we focus on the high-frequency response of the electrothermal NbO2-Mott threshold switch, a real-world electronic device, which has been proved to be relevant in several applications and is classified as a…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
We demonstrate non-volatile optical functionality by embedding multi-layer $HfO_2/Al_2O_3$ memristors with III-V/Si photonics. The wafer-bonded III-V/Si memristor facilitates non-volatile optical functionality for a variety of devices such…
We have studied the irreversibility of the magnetization induced by thermal cycles in La0.5Ca0.5MnO3 manganites, which present a low temperature state characterized by the coexistence of phases. The effect is evidenced by a decrease of the…
In a recent paper (Michalopolou A., Syskakis E. and Papastaikoudis C., 2001 J. Phys.: Cond. Mat. 13, 11615) the authors reported on the measurements of electrical resistivity and specific heat at zero magnetic field carried out on…