Related papers: Single-edge transport in an InAs/GaSb quantum spin…
We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field.…
We consider multi-terminal transport through a flake of rectangular shape of a two-dimensional topological insulator in the presence of an in-plane magnetic field. This system has been shown to be a second-order topological insulator, thus…
We develop a theory of edge state transport in separately contacted double-layer quantum Hall systems which are tuned close to the resonance condition for tunneling between the layers. When applied to the case where contact is made to only…
We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. Electrostatic gate is used to push the Fermi level into the gap regime, where the conductance…
We show how a quantum dot with a ballistic single-channel point contact to a superconductor can be created by means of a gate electrode at the edge of a quantum spin Hall insulator (such as an InAs/GaSb quantum well). A weak perpendicular…
We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the…
The nature of edge state transport in quantum Hall systems has been studied intensely ever since Halperin [1] noted its importance for the quantization of the Hall conductance. Since then, there have been many developments in the study of…
We measure the frequency dependent capacitance of a gate covering the edge and part of a two-dimensional electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic puddle under the gate surrounded by an…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…
Quantum spin Hall insulators have one-dimensional (1D) spin-momentum locked topological edge states (ES) inside the bulk band gap, which can serve as dissipationless channels for the practical applications in low consumption electronics and…
A quantum anomalous Hall (QAH) insulator is characterized by quantized Hall and vanishing longitudinal resistances at zero magnetic field that are protected against local perturbations and independent of sample details. This insensitivity…
SmB$_6$ has been predicted to be a Kondo Topological Insulator with topologically protected conducting surface states. We have studied quantitatively the electrical transport through surface states in high quality single crystals of…
Weak topological insulators, constructed by stacking quantum spin Hall insulators with weak interlayer coupling, offer promising quantum electronic applications through topologically nontrivial edge channels. However, the currently…
The edge of a two-dimensional electron system (2DES) in a magnetic field consists of one-dimensional (1D) edge-channels that arise from the confining electric field at the edge of the specimen$^{1-3}$. The crossed electric and magnetic…
We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a…
Quantum spin Hall edge transport in two-dimensional transition-metal dichalcogenides depends on whether their one-dimensional edge channels are preserved under realistic substrates and device boundaries. Here we implement spin-orbit…
Two-dimensional photonic crystals made of six air holes on a core-shell dielectric material has been proposed to study the newly emerged photonic quantum spin Hall insulator. Specifically, radii modification of the air holes and core-shell…
We have fabricated a sub-micron-sized structure consisting of an InAs-based 2DEG, two narrow Nb leads and a gate, where the indirect ballistic transport between the non-oppositely superconducting contacts can be controlled by the voltage…
Topological edge states at the boundary of quantum spin Hall (QSH) insulators hold great promise for dissipationless electron transport. The device application of topological edge states has several critical requirements for the QSH…
Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs,…