Related papers: Single-edge transport in an InAs/GaSb quantum spin…
Quantized Hall conductance is a generic feature of two dimensional electronic systems with broken time reversal symmetry. In the quantum anomalous Hall state recently discovered in magnetic topological insulators, time reversal symmetry is…
A recent experiment [Cohen et al., Science 382, 542 (2023)] observed a robustly quantized $e^2/2h$ conductance in a quantum point contact between fractional quantum Hall edges (a quantum Hall transformer), which then vanishes at low…
Topologically nontrivial band structure of a material may give rise to special states that are confined to the material's boundary and protected against disorder and scattering. Quantum spin Hall effect (QSHE) is a paradigmatic example of…
General nonequilibrium quantum transport equations are derived for a coupled system of charge carriers, Dirac spin, isospin (or valley spin), and pseudospin, such as either one of the band, layer, impurity, and boundary pseudospins.…
We would like to point out that: (i) according to the edge-bulk transport models for the quantum Hall regime, the direction of low bulk conductance is actually perpendicular to that expected naively; and (ii) the values of experimental…
We survey some recent accumulated body of works on hyperfine-mediated transport in a confined one-dimensional channel, realized typically by electrostatic gating. Our review begins with how the spin-polarized edge current can be used as a…
We use a scanning capacitance probe to image transport in the quantum Hall system. Applying a DC bias voltage to the tip induces a ring-shaped incompressible strip (IS) in the 2D electron system (2DES) that moves with the tip. At certain…
Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We…
Certain fractional quantum Hall edges have been predicted to undergo quantum phase transitions which reduce the number of edge channels and at the same time bind electrons together. However, detailed studies of experimental signatures of…
We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic…
The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of…
We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows…
A two-dimensional kagome lattice is theoretically investigated within a simple tight-binding model, which includes the nearest neighbor hopping term and the intrinsic spin-orbit interaction between the next nearest neighbors. By using the…
We develop a simple model of surface states for topological insulators, developing matching relations for states on surfaces of different orientations. The model allows one to write simple Dirac Hamiltonians for each surface, and to…
We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted…
In a recent experiment, Young et al. [Nature {\bf 505}, 528 (2014)] observed a metal to insulator transition as well as transport through helical edge states in monolayer graphene under a strong, tilted magnetic field. Under such…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
Topologically-protected edge states are dissipationless conducting surface states immune to impurity scattering and geometrical defects that occur in electronic systems characterized by a bulk insulating gap. One example can be found in a…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
Quantum Spin-Hall systems are topological insulators displaying dissipationless spin currents flowing at the edges of the samples. In contradistinction to the Quantum Hall systems where the charge conductance of the edge modes is quantized,…