English

Edge-state competition in a 2D topological insulator-semiconductor heterostructure

Mesoscale and Nanoscale Physics 2025-08-19 v1 Materials Science

Abstract

Quantum spin Hall edge transport in two-dimensional transition-metal dichalcogenides depends on whether their one-dimensional edge channels are preserved under realistic substrates and device boundaries. Here we implement spin-orbit coupling in DFTB and GFN-xTB within the Amsterdam Modeling Suite, and apply it to 1T'/2H WSe2_2 heterostructures. Edge-projected spectra reveal robust edge states in 1T' ribbons; and these states remain robust against a laterally infinite 2H substrate, which only shifts the Dirac point via long-wavelength corrugation without introducing additional in-gap states. By contrast, terminated 2H edges generate trivial dispersion branches in the same energy window that hybridize only weakly with the topological edge modes. In the bulk, Fermi-level states are 1T'-derived; at the small twist angle, lattice-relaxation-induced strain drives miniband reconstruction, whereas at the large twist angle, the layers become electronically decoupled. These findings suggest the conditions -- controlled twist angle and avoidance of terminated 2H edges -- for achieving quantized conductance and unambiguous spectroscopic

Keywords

Cite

@article{arxiv.2508.12841,
  title  = {Edge-state competition in a 2D topological insulator-semiconductor heterostructure},
  author = {Wei Li and Pier Philipsen and Thomas Brumme and Thomas Heine},
  journal= {arXiv preprint arXiv:2508.12841},
  year   = {2025}
}
R2 v1 2026-07-01T04:54:39.844Z