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Preparation of solid solutions represents an effective means to improve the photocatalytic properties of semiconductor-based materials. Nevertheless, the effects of site-occupancy disorder on the mixing stability and electronic properties…
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by…
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…
We present an investigation into the role of anode grid pitch and excitation spectrum on the performance of high-power optoelectronic switches utilizing Fe-doped $\beta$-Ga$_2$O$3$. By systematically varying the anode grid pitch ($20-80\…
Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. The cell performance can be greatly limited by the…
We propose a novel picture of high-harmonic generation (HHG) in solids based on the concept of temporally changing band structures. To demonstrate the utility of this picture, we focus on the high-order sideband generation (HSG) caused by…
The quantification of surface area between mineral and reactive fluid is essential in environmental applications of reactive transport modelling. This quantity evolves with microstructures and is difficult to predict because the mechanisms…
We demonstrate, theoretically and experimentally, that a traveling electric charge passing from one photonic crystal into another generates edge waves -- electromagnetic modes with frequencies inside the common photonic bandgap localized at…
We study the optical reflectivity of three-dimensional (3D) photonic band gap crystals with increasing thickness. The crystals consist of GaAs plates with nanorod arrays that are assembled by an advanced stacking method into high-quality 3D…
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…
Optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been employed to study magnesium-doped GaN layers grown by metal-organic vapor phase epitaxy. As the Mg doping level is changed, the…
Low energy electron diffraction (LEED) experiments, LEED simulations and finite slab density functional calculations are combined to study the cleavage surface of Co doped BaFe_{2-x}Co_{x}As_{2} (x = 0.1, 0.17). We demonstrate that the…
The level structure of nuclei offers a large amount and variety of information to improve our knowledge of the strong interaction and of mesoscopic quantum systems. Gamma spectroscopy is a powerful tool to perform such studies: modern gamma…
Scattering theory has been suggested as a convenient method to identify topological phases of matter, in particular of disordered systems for which the Bloch band-theory approach is inapplicable. Here we examine this idea, employing as a…
Integrated photodetectors are crucial for their high speed, sensitivity, and efficient power consumption. In these devices, photocurrent generation is primarily attributed to the photovoltaic (PV) effect, driven by electron hole…
Remarkably big increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers is observed by means of band gap spectroscopy. It is explained and simulated in terms of changes in the absorption/emission…
The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5 and 20 keV). It was found that the radiation exposures results in…
Recent works[1-3] reported evidence for charge density waves (CDWs) in infinite layer nickelates (112 structure) based on resonant diffraction at the Ni $L_3$ edge measured at fixed scattering angle. We have found that a measurement with…
We investigate the structural and optical properties of spontaneously formed GaN nanowires with different degrees of coalescence. This quantity is determined by an analysis of the cross-sectional area and perimeter of the nanowires obtained…
The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current…