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The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate…
Matrix elements of electron-light interactions for armchair and zigzag graphene nanoribbons are constructed analytically using a tight-binding model. The changes in wavenumber ($\Delta n$) and pseudospin are the necessary elements if we are…
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…
We establish a correlation between the internal stress in InN epilayers and their optical properties such as the measured absorption band edge and photoluminescence emission wavelength. By a careful evaluation of the lattice constants of…
We study the microscopic origins of photocurrent generation in the topological insulator Bi$_2$Se$_3$ via time- and angle-resolved photoemission spectroscopy. We image the unoccupied band structure as it evolves following a circularly…
Since lattice strain and charge density affect various material properties of graphene, a reliable and efficient method is required for quantification of the two variables. While Raman spectroscopy is sensitive and non-destructive, its…
The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are…
In the real world, anomalous entities often add more legitimate connections while hiding direct links with other anomalous entities, leading to heterophilic structures in anomalous networks that most GNN-based techniques fail to address.…
The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence…
Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A…
Spatially resolved photocurrent measurements on carbon nanotube field-effect transistors (CNFETs) operated in various transport regimes are reported. It is demonstrated that the photocurrents measured at different biasing conditions provide…
A stochastic cumulant GW method is presented, allowing us to map the evolution of photoemission spectra, quasiparticle energies, lifetimes and emergence of collective excitations from molecules to bulk-like systems with up to thousands of…
Edges naturally exist in a single-layer graphene sample. Similarly, individual graphene layers in a multilayer graphene sample contribute their own edges. We study the Raman spectrum at the edge of a graphene layer laid on n layer graphene…
Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies…
We present a general model study of surface-enhanced resonant Raman scattering and fluorescence, focusing on the interplay between electromagnetic (EM) effects and the molecular dynamics as treated by a density matrix calculation. The model…
The electronic band structure, describing the motion and interactions of electrons in materials, dictates the electrical, optical, and thermodynamic properties of solids. Angle-resolved photoemission spectroscopy (ARPES) provides a direct…
We demonstrate the use of Stimulated Emission Depletion (STED) spectroscopy to map the electron-optical-phonon sideband of the ground state of the radiative transition of color centers in hexagonal boron nitride emitting at 2.0-2.2 eV, with…
DC photoelectrical currents can be generated purely as a non-linear effect in uniform media lacking inversion symmetry without the need for a material junction or bias voltages to drive it, in what is termed photogalvanic effect. These…
We study the resonance behaviour of the forbidden 600 and 222 x-ray Bragg peaks in Ge using LDA band structure methods. These Bragg peaks remain forbidden in the resonant dipole scattering approximation even taking into account the non…
The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different growth kinetics. However, because it is difficult to…