Demonstration of Rashba spin splitting in GaN-based heterostructures

W. Weber; S. D. Ganichev; Z. D. Kvon; V. V. Bel'kov; L. E. Golub; S. N. Danilov; D. Weiss; W. Prettl; Hyun-Ick Cho; Jung-Hee Lee

doi:10.1063/1.2158024

Demonstration of Rashba spin splitting in GaN-based heterostructures

Other Condensed Matter 2009-11-11 v1

Authors: W. Weber , S. D. Ganichev , Z. D. Kvon , V. V. Bel'kov , L. E. Golub , S. N. Danilov , D. Weiss , W. Prettl , Hyun-Ick Cho , Jung-Hee Lee

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Abstract

The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitting, caused by the built-in asymmetry at the AlGaN/GaN interface.

Keywords

Rashba spin splitting GaN heterostructures photogalvanic effect spin splitting interface asymmetry

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@article{arxiv.cond-mat/0509208,
  title  = {Demonstration of Rashba spin splitting in GaN-based heterostructures},
  author = {W. Weber and S. D. Ganichev and Z. D. Kvon and V. V. Bel'kov and L. E. Golub and S. N. Danilov and D. Weiss and W. Prettl and Hyun-Ick Cho and Jung-Hee Lee},
  journal= {arXiv preprint arXiv:cond-mat/0509208},
  year   = {2009}
}

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7 pages, 3 figures

Demonstration of Rashba spin splitting in GaN-based heterostructures

Abstract

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