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Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

Condensed Matter 2009-11-10 v1
Authors: V. V. Bel'kov , S. D. Ganichev , Petra Schneider , C. Back , M. Oestereich , J. Rudolph , D. Haegele , L. E. Golub , W. Wegscheider , W. Prettl
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Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

Keywords

circular photogalvanic effect GaAs quantum wells inter-band excitation spin splitting photoluminescence

Cite

@article{arxiv.cond-mat/0308420,
  title  = {Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells},
  author = {V. V. Bel'kov and S. D. Ganichev and Petra Schneider and C. Back and M. Oestereich and J. Rudolph and D. Haegele and L. E. Golub and W. Wegscheider and W. Prettl},
  journal= {arXiv preprint arXiv:cond-mat/0308420},
  year   = {2009}
}

Comments

3 pages, 3 figures

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