Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW

S. D. Ganichev; E. L. Ivchenko; H. Ketterl; L. E. Vorobjev; W. Prettl

doi:10.1063/1.1326488

Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW

Instrumentation and Detectors 2009-11-06 v1 Materials Science

Authors: S. D. Ganichev , E. L. Ivchenko , H. Ketterl , L. E. Vorobjev , W. Prettl

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Abstract

The circular photogalvanic effect (CPGE) has been observed in (100)-oriented $p$ -GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation. CPGE at normal incidence and the occurence of the linear photogalvanic effect indicate a reduced point symmetry of studied multi-layered heterostructures. As proposed, CPGE can be utilized to investigate separately spin polarization of electrons and holes and the symmetry of quantum wells.

Keywords

circular photogalvanic effect monopolar spin orientation p-gaas/algaas quantum wells far-infrared radiation point symmetry

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@article{arxiv.physics/0008002,
  title  = {Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW},
  author = {S. D. Ganichev and E. L. Ivchenko and H. Ketterl and L. E. Vorobjev and W. Prettl},
  journal= {arXiv preprint arXiv:physics/0008002},
  year   = {2009}
}

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4 pages, 3 figures

Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW

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