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In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…

Memory management is necessary with the increasing number of multi-connected AI devices and data bandwidth issues. For this purpose, high-speed multi-port memory is used. The traditional multi-port memory solutions are hard-bounded to a…

State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…

Resistive random access memories (RRAM) are novel nonvolatile memory technologies, which can be embedded at the core of CMOS, and which could be ideal for the in-memory implementation of deep neural networks. A particularly exciting vision…

Here it is proposed a three-dimensional plasmonic nonvolatile memory crossbar arrays that can ensure a dual-mode operation in electrical and optical domains. This can be realized through plasmonics that serves as a bridge between photonics…

Processing-in-Memory (PIM) architectures enable computation directly within DRAM and help combat the memory wall problem. Bit-shifting is a fundamental operation that enables PIM applications such as shift-and-add multiplication, adders…

Memristive crossbars have become a popular means for realizing unsupervised and supervised learning techniques. In previous neuromorphic architectures with leaky integrate-and-fire neurons, the crossbar itself has been separated from the…

Crossbar array architecture is an essential design element for densely connected Non-Volatile Memory(NVM) applications. To overcome intrinsic sneak current problem of crossbar arrays, each memory unit is serially attached to a selector unit…

Recent works demonstrated the promise of using resistive random access memory (ReRAM) as an emerging technology to perform inherently parallel analog domain in-situ matrix-vector multiplication -- the intensive and key computation in DNNs.…

We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Bandwidth Memory (HBM). Detailed characterization of six real…

In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write…

For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique…

Optical static random access memory (O-SRAM) is one of the key components required for achieving the goal of ultra-fast, general-purpose optical computing. We propose and design a novel O-SRAM using fabrication-friendly photonics device…

We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…

This paper addresses a novel five-transistor (5T) CMOS SRAM design with high performance and reliability in 65nm CMOS, and illustrates how it reduces the dynamic power consumption in comparison with the conventional and low-power 6T SRAM…

The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…

Frequency-multiplexing is an effective method to achieve resource-efficient superconducting qubit readout. Allowing multiple resonators to share a common feedline, the number of cables and passive components involved in the readout of a…

In-memory computing on a reconfigurable architecture is the emerging field which performs an application-based resource allocation for computational efficiency and energy optimization. In this work, we propose a Ferroelectric…

The ever-increasing demand to extract temporal correlations across sequential data and perform context-based learning in this era of big data has led to the development of long short-term memory (LSTM) networks. Furthermore, there is an…

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…