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This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of…
Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…
The increasing computational demand of Convolutional Neural Networks (CNNs) necessitates energy-efficient acceleration strategies. Compute-in-Memory (CIM) architectures based on Resistive Random Access Memory (RRAM) offer a promising…
Resistive memories store information in a crossbar arrangement of two-terminal devices that can be programmed to patterns of high or low resistance. While extremely compact, this technology suffers from the "sneak-path" problem: certain…
Parallel wireless digital communication with ultralow power consumption is critical for emerging edge technologies such as 5G and Internet of Things. However, the physical separation between digital computing units and analogue transmission…
This work explores the cross-node scaling potential of SOT-MRAM for last-level caches (LLCs) under heterogeneous system scaling paradigm. We perform extensive Design-Technology Co-Optimization (DTCO) exercises to evaluate the bitcell…
Resistive Random Access Memory (ReRAM) has emerged as a promising platform for deep neural networks (DNNs) due to its support for parallel in-situ matrix-vector multiplication. However, hardware failures, such as stuck-at-fault defects, can…
Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…
Photonic neural networks capable of rapid programming are indispensable to realize many functionalities. Phase change technology can provide nonvolatile programmability in photonic neural networks. Integrating direct laser writing technique…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
This paper experimentally demonstrates a near-crossbar memory logic technique called Pinatubo. Pinatubo, an acronym for Processing In Non-volatile memory ArchiTecture for bUlk Bitwise Operations, facilitates the concurrent activation of two…
In this paper, we propose a novel memory-centric scheme based on CMOS SRAM for acceleration of data intensive applications. Our proposal aims at dynamically increasing the on-chip memory storage capacity of SRAM arrays on-demand. The…
This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…
The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have…
We propose 2D Piezoelectric FET (PeFET) based compute-enabled non-volatile memory for ternary deep neural networks (DNNs). PeFETs consist of a material with ferroelectric and piezoelectric properties coupled with Transition Metal…
Spin-Transfer Torque RAM (STTRAM) is promising for cache applications. However, it brings new data security issues that were absent in volatile memory counterparts such as Static RAM (SRAM) and embedded Dynamic RAM (eDRAM). This is…
Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are…
Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed…
Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have…
This dissertation rigorously characterizes many modern commodity DRAM devices and shows that by exploiting DRAM access timing margins within manufacturer-recommended DRAM timing specifications, we can significantly improve system…