Related papers: A two-dimensional spin field-effect transistor
We propose a modified spin-field-effect transistor fabricated in a two dimensional electron gas (2DEG) formed at the surface of multiferroic oxides with a transverse helical magnetic order. The topology of the oxide local magnetic moments…
The electronic and optoelectronic properties of two dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel…
Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
Graphene sandwiched between semiconducting monolayers of ferromagnet Cr$_2$Ge$_2$Te$_6$ and transition-metal dichalcogenide WS$_2$ acquires both spin-orbit (SO), of valley-Zeeman and Rashba types, and exchange couplings. Using…
We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels.…
The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy…
Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…
Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging…
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the…
Strong electron correlation and spin-orbit coupling (SOC) provide two non-trivial threads to condensed matter physics. When these two strands of physics come together, a plethora of quantum phenomena with novel topological order have been…
We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge…
We report a first principles theoretical investigation of quantum transport in monolayer WSe2 field effect transistor (FET). Due to a strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional (2D) lattice,…
In this study, we present first-principles calculations that introduce a novel nonvolatile spin field-effect transistor (Spin-FET) utilizing a van der Waals multiferroic heterostructure, specifically VSi2N4/Sc2CO2. We demonstrate that…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({\tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle…
Inducing sizable spin--orbit interactions in graphene by proximity effect is establishing as a successful route to harnessing two-dimensional Dirac fermions for spintronics. Semiconducting transition metal dichalcogenides (TMDs) are an…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
Spintronics---the all-electrical control of the electron spin for quantum or classical information storage and processing---is one of the most promising applications of the two-dimensional material graphene. Although pristine graphene has…
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…