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Related papers: A two-dimensional spin field-effect transistor

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Spin injection is a powerful experimental probe into a wealth of nonequilibrium spin-dependent phenomena displayed by materials with spin-orbit coupling (SOC). Here, we develop a theory of coupled spin-charge diffusive transport in…

Mesoscale and Nanoscale Physics · Physics 2019-12-25 Yu-Hsuan Lin , Chunli Huang , Manuel Offidani , Aires Ferreira , Miguel A. Cazalilla

Lateral charge transport of a two-dimensional (2D) electronic system can be much influenced by feeding a current into another closely spaced 2D conductor, known as the Coulomb drag phenomenon -- a powerful probe of electron-electron…

Mesoscale and Nanoscale Physics · Physics 2025-03-04 Yingjia Liu , Kaining Yang , Kenji Watanabe , Takashi Taniguchi , Wencai Ren , Zheng Vitto Han , Siwen Zhao

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…

The concept of swapping the two most important spin interactions -- exchange and spin-orbit coupling -- is proposed based on two-dimensional multilayer van der Waals heterostructures. Specifically, we show by performing realistic ab initio…

Mesoscale and Nanoscale Physics · Physics 2020-11-05 Klaus Zollner , Martin Gmitra , Jaroslav Fabian

We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…

Applied Physics · Physics 2020-07-22 Shoichi Sato , Masaaki Tanaka , Ryosho Nakane

The continuous need for miniaturization and increase in device speed exerts pressureon the electronics industry to explore new avenues of information processing. One possibility is to use the spin to store, manipulate and carry information.…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Mona Berciu , Tatiana G. Rappoport , B. Janko

Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the…

Mesoscale and Nanoscale Physics · Physics 2017-06-27 Yunqiu , Luo , Jinsong Xu , Tiancong Zhu , Guanzhong Wu , Elizabeth J. McCormick , Wenbo Zhan , Mahesh R. Neupane , Roland K. Kawakami

Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…

Computational Physics · Physics 2025-01-08 Sirsendu Ghosh , Anamika Devi Laishram , Pramod Kumar

van der Waals heterostructures assembled from atomically thin crystals are ideal model systems to study spin-orbital coupled transport because they exhibit a strong interplay between spin, lattice and valley degrees of freedom that can be…

Mesoscale and Nanoscale Physics · Physics 2021-08-18 Carmen Monaco , Aires Ferreira , Roberto Raimondi

Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…

Mesoscale and Nanoscale Physics · Physics 2017-01-30 Kuei-Lin Chiu , Yang Xu

All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit…

Mesoscale and Nanoscale Physics · Physics 2016-07-12 Jifa Tian , Ting-Fung Chung , Ireneusz Miotkowski , Yong P. Chen

Understanding the effect of electric fields on the physical and chemical properties of two-dimensional (2D) nanostructures is instrumental in the design of novel electronic and optoelectronic devices. Several of those properties are…

Mesoscale and Nanoscale Physics · Physics 2014-08-19 Elton J. G. Santos

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…

Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using…

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…

Materials Science · Physics 2009-11-13 Biqin Huang , Douwe J. Monsma , Ian Appelbaum

The discovery of an ever increasing family of atomic layered magnetic materials, together with the already established vast catalogue of strong spin-orbit coupling (SOC) and topological systems, calls for some guiding principles to tailor…

Materials Science · Physics 2021-10-13 Hidekazu Kurebayashi , Jose H. Garcia , Safe Khan , Jairo Sinova , Stephan Roche

Emerging two-dimensional (2D) magnetic semiconductors represent transformative platforms to explore magneto-optics and opto-spintronic applications. Though 2D opto-spintronics has attracted tremendous research efforts in spin-dependent…

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

Mesoscale and Nanoscale Physics · Physics 2013-06-25 Branimir Radisavljevic , Andras Kis

Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However,…

Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have…

Materials Science · Physics 2016-07-15 Mervin Zhao , Yu Ye , Yimo Han , Yang Xia , Hanyu Zhu , Yuan Wang , David A. Muller , Xiang Zhang
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