Related papers: Giant interfacial perpendicular magnetic anisotrop…
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become…
Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved…
Materials based on the Sm-Co system exhibit remarkable magnetic performance due to their high Curie temperature, large saturation magnetization, and strong magnetic anisotropy, which are the result of the electronic structure in Co and Sm…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…
We investigated the effect of an electric field on the interface magnetic anisotropy of a thin MgO/Fe/MgO layer using density functional theory. The perpendicular magnetic anisotropy energy (MAE) increases not only under electron depletion…
Based on high-throughput density functional theory calculations, we performed screening for stable magnetic MAB compounds and predicted potential strong magnets for permanent magnet and magnetocaloric applications. The thermodynamical,…
We report tight-binding (TB) calculations of magnetocrystalline anisotropy energy (MAE) of Iron slabs and nanoclusters with a particuler focus on local analysis. After clarifying various concepts and formulations for the determination of…
An empirical multiorbital (spd) tight binding (TB) model including magnetism and spin-orbit coupling is applied to calculations of magnetic anisotropy energy (MAE) in CoPt L1_0 structure. A realistic Slater-Koster parametrisation for…
The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it…
Despite the crucial role of interfacial perpendicular magnetic anisotropy in Co(Fe)/MgO based magnetic tunnel junction, the underlying mechanism is still being debated. Here, we report an anatomical study of oxygen and Mg effect on Pt/Co…
The Co$_2$Ge$_2$Te$_6$ shows intrinsic ferromagnetic (FM) order, which origins from superexchange interaction between Co and Te atoms, with higher Curie temperature ($T_c$) of 161 K. Co$_2$Ge$_2$Te$_6$ monolayer (ML) is half-metal (HM), and…
Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal…
Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in…
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of…
We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta / MnN / CoFeB / MgO / Ta were grown on SiO$_x$ by (reactive) magnetron sputtering and studied…
We investigated the effects of annealing temperatures (TA) on a Pd (5 nm)/CoFeB (10 nm)/Pd (3 nm)/Ta (10 nm) multilayer structure. The as-deposited sample showed an amorphous state with in-plane uniaxial magnetic anisotropy (UMA), resulting…
Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on…
Understanding magnetocrystalline anisotropy (MCA) is fundamentally important for developing novel magnetic materials. Therefore, clarifying the relationship between MCA and local physical quantities observed by spectroscopic measurements,…
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each…
The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours…