Related papers: Giant interfacial perpendicular magnetic anisotrop…
Heterostructures comprising ferromagnet (FM) and heavy metals (HM) with perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (iDMI) can host chiral domain walls and topological spin textures, making them…
Perpendicular magnetic anisotropy (PMA) plays an important role in different spintronic devices. The rapid development of spintronics requires a better understanding of the nature and mechanisms of the PMA formation. In our article, we…
Controlling the perpendicular magnetic anisotropy (PMA) in thin films has received considerable attention in recent years due to its technological importance. PMA based devices usually involve heavy-metal (oxide)/ferromagnetic-metal…
We report the compositional and temperature dependence of magnetic compensation in amorphous GdFeCo films. Magnetic compensation is attributed to the competition between antiferromagnetic coupling of rare-earth with transition-metal (TM)…
The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature…
The origin of large perpendicular magneto-crystalline anisotropy (PMCA) in Fe/MgO (001) is revealed by comparing Fe layers with and without the MgO. Although Fe-O $p$-$d$ hybridization is weakly present, it cannot be the main origin of the…
Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer…
Magnetocrystalline anisotropy in transition metal alloys (FePt, CoPt, FePd, MnAl, MnGa, and FeCo) was studied using first-principles calculations to elucidate its specific mechanism. The tight-binding linear muffin-tin orbital method in the…
Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with…
Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…
The magnetic anisotropy (MA) of Mo/Au/Co0.9Fe0.1/Au/MgO(0.7 - 3 nm)/Au/Co0.9Fe0.1/Au heterostructure has been investigated at room temperature as a function of MgO layer thickness (tMgO). Our studies show that while the MA of the top layer…
We report first-principles investigations of magnetocrystalline anisotropy energy (MCAE) oscillations as a function of capping layer thickness in Heusler alloy Co\textsubscript{2}FeAl/Ta heterostructures. Substantial oscillation is observed…
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver…
Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an…
Magnetic tunnel junctions with a magnetic layer with perpendicular anisotropy are currently used in computer memories that do not require voltage sustaining. An example of layers with perpendicular magnetic anisotropy are ultrathin FeCo…
In our JunPy package, we have combined the first-principles calculated self-consistent Hamiltonian with divide-and-conquer technique to successfully determine the magnetic anisotropy (MA) in an Fe/MgO/Fe magnetic tunnel junction (MTJ). We…
In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an…
SmCo5 is an important hard magnetic material, due to its large magnetic anisotropy energy (MAE). We have studied the magnetic properties of SmCo5 using density functional theory (DFT) calculations where the Sm f-bands, which are difficult…
Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a…