Related papers: Interface electronic structure at the topological …
Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in…
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…
We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in…
We formulate a continuum model to study the low-energy electronic structure of heterostructures formed by graphene on a strong three-dimensional topological insulator (TI) for the case of both commensurate and incommensurate stacking. The…
The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such…
The proximity effect at the interface between a topological insulator (TI) and a superconductor is predicted to give rise to chiral topological superconductivity and Majorana fermion excitations. In most TIs studied to date, however, the…
Topological Insulators (TIs) present an interesting materials platform for nanoscale, high frequency devices because they support high mobility, low scattering electronic transport within confined surface states. However, a robust…
Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…
The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure,…
The layered compound Fe3GaTe2 is attracting attention due to its high Curie temperature, low dimensionality, and the presence of topological spin textures above room temperature, making Fe$_3$GaTe$_2$ a good candidate for applications in…
Y3Fe5O12 (YIG) is a promising candidate for spin wave devices. In the thin film devices, the interface between YIG and substrate may play important roles in determining the device properties. Here, we use spherical aberration-corrected…
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin…
Inducing magnetic orders in a topological insulator (TI) to break its time reversal symmetry has been predicted to reveal many exotic topological quantum phenomena. The manipulation of magnetic orders in a TI layer can play a key role in…
Heterostructures of topological insulators and ferromagnets offer new opportunities in spintronics and a route to novel anomalous Hall states. In one such structure, EuS/Bi$_{2}$Se$_{3}$ a dramatic enhancement of the Curie temperature was…
Ferrimagnetic Y$_3$Fe$_5$O$_{12}$ grown on the (001) surface of paramagnetic Gd$_3$Ga$_5$O$_{12}$ experiences an exchange bias field, which has been attributed to the magnetism of an interface layer between the two materials. We report here…
We consider a thin film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic…
We investigate a magnetic proximity effect on Dirac surface states of topological insulator (TI) induced by a Bi$_2$Se$_3$/EuS interface, using density-functional theory (DFT) and a low-energy effective model, motivated by a recent…
Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades,…
Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin…
Topological insulators are a recently discovered class of materials with fascinating properties: While the inside of the solid is insulating, fundamental symmetry considerations require the surfaces to be metallic. The metallic surface…