English

Atomic-scale structure and chemistry of YIG/GGG Interface

Materials Science 2018-03-13 v1

Abstract

Y3Fe5O12 (YIG) is a promising candidate for spin wave devices. In the thin film devices, the interface between YIG and substrate may play important roles in determining the device properties. Here, we use spherical aberration-corrected scanning electron microscopy and spectroscopy to study the atomic arrangement, chemistry and electronic structure of the YIG/Gd3Ga5O12 (GGG) interface. We find that the chemical bonding of the interface is FeO-GdGaO and the interface remains sharp in both atomic and electronic structures. These results provide necessary information for understanding the properties of interface and also for atomistic calculation.

Keywords

Cite

@article{arxiv.1803.03799,
  title  = {Atomic-scale structure and chemistry of YIG/GGG Interface},
  author = {Mengchao Liu and Lichuan Jin and Jingmin Zhang and Qinghui Yang and Huaiwu Zhang and Peng Gao and Dapeng Yu},
  journal= {arXiv preprint arXiv:1803.03799},
  year   = {2018}
}