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Related papers: Counterintuitive strain distribution in axial (In,…

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The longitudinal and transverse resistivities of differently strained (Ga,Mn)As layers are theoretically and experimentally studied as a function of the magnetization orientation. The strain in the series of (Ga,Mn)As layers is gradually…

Materials Science · Physics 2009-04-09 W. Limmer , J. Daeubler , L. Dreher , M. Glunk , W. Schoch , S. Schwaiger , R. Sauer

SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diffraction experiments on a single fully-processed and…

A simple model which combines tight-binding (TB) approximation with parameters derived from first principle calculations is developed for studying the influence of edge passivation and uniaxial strain on electron effective mass of armchair…

Mesoscale and Nanoscale Physics · Physics 2014-06-06 Benjamin O. Tayo

We calculate the electrical conductivity of a thin crystalline strip of atoms confined within a quasi one dimensional channel of fixed width. The conductivity shows anomalous behavior as the strip is deformed under tensile loading. Beyond a…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Soumendu Datta , Debasish Chaudhuri , Tanusri Saha-Dasgupta , Surajit Sengupta

Moir'e patterns in the pseudo-magnetic field and in the strain profile of graphene (GE) when put on top of a hexagonal lattice substrate are predicted from elasticity theory. %which are confirmed by atomistic simulations. The van der Waals…

Mesoscale and Nanoscale Physics · Physics 2015-06-22 M. Neek-Amal , F. M. Peeters

In this study, we present a first-principles investigation of the electronic and optical properties of gallium nitride (GaN) bilayers, focusing on the influence of interlayer sliding and spacing. In contrast to the earlier studies on…

Mesoscale and Nanoscale Physics · Physics 2025-06-03 Heeju Kim , Gunn Kim

Band Structures and optical matrix elements of quantum wires(QWR's) made of short-period superlattices(SPS) with strain-induced lateral ordering(SILO) are investigated theoretically via an effective bond-orbital model(EBOM) combined with a…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 L-X. Li , J. Sun , Y. C. Chang

First principles density-functional theory calculations were performed to study the effects of strain, edge passivation, and surface functional species on the structural and electronic properties of armchair graphene nanoribbons (AGNRs)…

Materials Science · Physics 2012-08-07 Xihong Peng , Fu Tang , Andrew Copple

Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in…

Mesoscale and Nanoscale Physics · Physics 2021-01-08 Masahiko Hayashi , Hideo Yoshioka , Hikari Tomori , Akinobu Kanda

We derive exact dispersion relations for axial and flexural elastic wave motion in a rod and a beam under finite deformation. For axial motion we consider a simple rod model, and for flexural motion we employ the Euler-Bernoulli kinematic…

Mathematical Physics · Physics 2013-04-23 Mohammad H. Abedinnasab , Mahmoud I. Hussein

As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve…

Materials Science · Physics 2013-07-10 Xuewen Fu , Cong Su , Qiang Fu , Xinli Zhu , Rui Zhu , Chuanpu Liu , Jun Xu , Ji Feng , Ju Li , Dapeng Yu

Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for…

Materials Science · Physics 2015-05-18 L. Dreher , D. Donhauser , J. Daeubler , M. Glunk , C. Rapp , W. Schoch , R. Sauer , W. Limmer

We study the transport properties, in particular, the thermoelectric figure of merit ZT of armchair graphene nanoribbons, AGNR-N (for N=4-12, with widths ranging from 3.7 to 13.6~\AA) through strain engineering, where N is the number of…

Materials Science · Physics 2013-08-22 Pei Shan Emmeline Yeo , Michael B. Sullivan , Kian Ping Loh , Chee Kwan Gan

Using molecular dynamics(MD) simulations, we study thermal transport in graphene nanoribbons (GNR) subjected to uniform uniaxial and nonuniform strain fields. We predict significant thermal rectification (over 70%) in a rectangular armchair…

Materials Science · Physics 2012-05-24 K. G. S. H. Gunawardana , Kieran Mullen , Jiuning Hu , Yong P. Chen , Xiulin Ruan

Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation strategies to improve device performance. To continue this…

Materials Science · Physics 2021-07-08 Simon Mellaerts , Valeri Afanasiev , Jin Won Seo , Michel Houssa , Jean-Pierre Locquet

We report measurements of magneto-resistance commensurability peaks, induced by a square array of anti-dots, in GaAs (311)A two-dimensional holes as a function of applied in-plane strain. The data directly probe the shapes of the Fermi…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 J. Shabani , M. Shayegan , R. Winkler

We investigate the strain effect along armchair and zigzag directions on the tunneling transport of Dirac fermions in graphene laser barrier through a time dependent potential along y-axis. Our system is composed of three regions and the…

Mesoscale and Nanoscale Physics · Physics 2022-08-31 Hasna Chnafa , Miloud Mekkaoui , Ahmed Jellal , Abdelhadi Bahaoui

Using first-principles density functional theory and determinant quantum Monte Carlo methods, we show that Janus graphene nanoribbons with topological defect arrays ($m=2$) exhibit robust intrinsic ferromagnetism across widths $W=2-6$, with…

Materials Science · Physics 2026-02-16 Ran Liu , Hongxing Liu , Junfeng Ren , Tianxing Ma

GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg…

Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that…

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