English

Strain-induced Fermi contour anisotropy of GaAs 2D holes

Mesoscale and Nanoscale Physics 2009-11-13 v1

Abstract

We report measurements of magneto-resistance commensurability peaks, induced by a square array of anti-dots, in GaAs (311)A two-dimensional holes as a function of applied in-plane strain. The data directly probe the shapes of the Fermi contours of the two spin subbands that are split thanks to the spin-orbit interaction and strain. The experimental results are in quantitative agreement with the predictions of accurate energy band calculations, and reveal that the majority spin-subband has a severely distorted Fermi contour whose anisotropy can be tuned with strain.

Keywords

Cite

@article{arxiv.0801.3106,
  title  = {Strain-induced Fermi contour anisotropy of GaAs 2D holes},
  author = {J. Shabani and M. Shayegan and R. Winkler},
  journal= {arXiv preprint arXiv:0801.3106},
  year   = {2009}
}

Comments

Accepted for publication in Phys. Rev. Lett