We use a recently developed self-consistent GW approximation to present first principles calculations of the conduction band spin splitting in GaAs under [110] strain. The spin orbit interaction is taken into account as a perturbation to the scalar relativistic hamiltonian. These are the first calculations of conduction band spin splitting under deformation based on a quasiparticle approach; and because the self-consistent GW scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. We also discuss the spin relaxation time under [110] strain and show that it exhibits an in-plane anisotropy, which can be exploited to obtain the magnitude and sign of the conduction band spin splitting experimentally.
@article{arxiv.0806.2295,
title = {Strain-Induced Conduction Band Spin Splitting in GaAs from First Principles Calculations},
author = {Athanasios N. Chantis and Manuel Cardona and Niels E. Christensen and Darryl L. Smith and Mark van Schilfgaarde and Takao Kotani and Axel Svane and Robert C. Albers},
journal= {arXiv preprint arXiv:0806.2295},
year = {2009}
}