Strain driven migration of In during the growth of InAs/GaAs quantum posts

D. Alonso-Álvarez; B. Alén; J. M. Ripalda; A. Rivera; A. G. Taboada; J. M. Llorens; Y. González; L. González; F. Briones

doi:10.1063/1.4818358

Strain driven migration of In during the growth of InAs/GaAs quantum posts

Materials Science 2013-09-10 v2 Mesoscale and Nanoscale Physics

Authors: D. Alonso-Álvarez , B. Alén , J. M. Ripalda , A. Rivera , A. G. Taboada , J. M. Llorens , Y. González , L. González , F. Briones

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Abstract

Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures.

Keywords

strain-driven migration InAs/GaAs quantum posts mechano-optical stress sensor compressive stress reduction surface diffusion self-assembled nanostructures

Cite

@article{arxiv.1108.1768,
  title  = {Strain driven migration of In during the growth of InAs/GaAs quantum posts},
  author = {D. Alonso-Álvarez and B. Alén and J. M. Ripalda and A. Rivera and A. G. Taboada and J. M. Llorens and Y. González and L. González and F. Briones},
  journal= {arXiv preprint arXiv:1108.1768},
  year   = {2013}
}

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10 pages, 4 figures. Published in APL Materials

Strain driven migration of In during the growth of InAs/GaAs quantum posts

Abstract

Keywords

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