Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.
@article{arxiv.1102.4490,
title = {Strain balanced quantum posts},
author = {D. Alonso-Álvarez and B. Alén and J. M. Ripalda and J. Llorens and A. G. Taboada and F. Briones and M. A. Roldán and J. Hernández-Saz and D. Hernández-Maldonado and M. Herrera and S. I. Molina},
journal= {arXiv preprint arXiv:1102.4490},
year = {2011}
}
Comments
Submitted to Applied Physics Letters (7th March 2011). 4 pages, 4 figures