Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers

Naoki Matsumura; Shunichi Muto; Sasilaka Ganapathy; Ikuo Suemune; Ken Numata; Konami Yabuta

Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers

Materials Science 2007-05-23 v1

Authors: Naoki Matsumura , Shunichi Muto , Sasilaka Ganapathy , Ikuo Suemune , Ken Numata , Konami Yabuta

Abstract

Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along the [001] growth direction while those parallel to the (001) crystal plane were kept unchanged

Keywords

lattice deformation InAs quantum dots GaNAs strain compensating layers anisotropic deformation ion channeling Rutherford backscattering

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@article{arxiv.cond-mat/0412721,
  title  = {Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers},
  author = {Naoki Matsumura and Shunichi Muto and Sasilaka Ganapathy and Ikuo Suemune and Ken Numata and Konami Yabuta},
  journal= {arXiv preprint arXiv:cond-mat/0412721},
  year   = {2007}
}

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8 pages with 5 postscript figures

Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers

Abstract

Keywords

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