Related papers: Simulations of a silicon pixel based on MOS Deep T…
Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region…
Gate-induced wave function manipulation of a single dopant atom is a possible basis of atomic scale electronics. From this perspective, we analyzed the effect of a small nearby gate on a single dopant atom in a semiconductor up to field…
The image-charge detection provides a new direct method for the detection of the Rydberg transition in electrons trapped on the surface of liquid helium. The interest in this method is motivated by the possibility to accomplish the spin…
We present an implementation of quantum logic gates via internal state dependent displacements of ions in a linear Paul trap caused by optical dipole forces. Based on a general quantum analysis of the system dynamics we consider specific…
Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system…
Iron phosphate glasses (IPG) have been proposed as futuristic glass material for nuclear waste immobilization, anode material for lithium batteries and also as bioactive glass. In the last decade, there have been attempts to propose…
Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs/AlGaAs heterostructure enable a large variety of applications from fundamental research to high speed transistors. Electrical circuits are thereby…
A digital quantum simulator is an envisioned quantum device that can be pro- grammed to efficiently simulate any other local system. We demonstrate and investigate the digital approach to quantum simulation in a system of trapped ions.…
We demonstrate a gate dielectric engineering approach leveraging an ultrathin, atomic layer deposited (ALD) silicon oxide interfacial layer (SiL) between the amorphous oxide semiconductor (AOS) channel and the high-k gate dielectric. SiL…
In the research of condensed matter, atomistic dynamic simulations play a crucial role, particularly in revealing dynamic processes, phase transitions and thermodynamic statistics macroscopic physical properties in systems such as solids…
Experimental evidence indicating the beneficial impact of a phosphorous diffusion gettering (PDG) in the reduction of trapping centers is shown, as observed by means of inductively coupled photoconductance (PC) decay and lifetime…
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…
This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise…
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…
Gyrotrons are essential for electron cyclotron resonance heating (ECRH) in fusion reactors, making efficient operation crucial for advancing fusion energy. Past experiments revealed instability issues due to trapped electrons in the…
In this paper, we present the unique features exhibited by modified asymmetrical Double Gate (DG) silicon on insulator (SOI) MOSFET. The proposed structure is similar to that of the asymmetrical DG SOI MOSFET with the exception that the…
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete…
Quantum computers have the potential to advance material design and drug discovery by performing costly electronic structure calculations. A critical aspect of this application requires optimizing the limited resources of the quantum…
A transition in source-drain current vs back gate voltage ID - VBG characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin…
We study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We…